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Chinese scientific research institutions successfully achieve 50mm thick 6-inch silicon carbide single crystal growth

According to the news on July 28, 2022, according to the release of Zhejiang University Hangzhou International Science and Technology Innovation Center, recently Zhejiang University Hangzhou International Science and Technology Center Advanced Semiconductor Research Institute-Dry Crystal Semiconductor Joint Laboratory and Zhejiang University State Key Laboratory of Silicon Materials in Zhejiang Province " With the support of research and development projects :a 6-inch silicon carbide single crystal with a thickness of 50 mm was successfully grown. This important development means that the cost of silicon carbide substrates is expected to be greatly reduced, and the development of the semiconductor silicon carbide industry may usher in new opportunities for development.

According to reports, silicon carbide (SiC) single crystal, as a wide-bandgap semiconductor material, is crucial to the development of high-voltage, high-frequency, high-temperature and high-power semiconductor devices. At present, the diameter of domestic silicon carbide single crystal has generally reached 6 inches, but its thickness is usually between ~20-30 mm, resulting in a relatively limited number of silicon carbide substrate sheets obtained by slicing a silicon carbide ingot.

According to the researchers, the main challenge of increasing the thickness of SiC single crystal lies in the increase of the thickness during growth and the change of the thermal field inside the growth chamber caused by the consumption of source powder. In response to the challenges, Zhejiang University has significantly improved the growth rate of SiC single crystal by designing a new thermal field for SiC single crystal growth equipment, developing new technologies for SiC source powder, and developing a new process for SiC single crystal growth. A 6-inch silicon carbide single crystal with a thickness of 50 mm was obtained. And the crystal quality of silicon carbide single crystal has reached the industry level.

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