Relying on the Jiangsu Key Laboratory of Silicon-based Electronic Materials under the name of GCL Silicon Materials, Jiangsu, the company has been approved for R & D special projects to encourage the transformation of many scientific and technological achievements into outstanding contributions to the industry.
Jiangsu Province Key Laboratory of Silicon-based Electronic Materials has a total area of 3,000 square meters, of which the class 1000 clean room is nearly 200 square meters. It is a comprehensive research platform for the growth of solar-grade crystalline silicon materials through comprehensive detection and analysis of photoluminescence attenuation and impurity elements. Through the transformation of a large number of research results and the improvement of production technology, the conversion efficiency of polycrystalline batteries has increased to more than 19.5%, and the conversion efficiency of single crystal batteries has increased to more than 20.5%, which is at the leading level in the industry.
In terms of crystal quality, the laboratory has achieved outstanding results in developing new ingot thermal fields and processes, improving minority life, reducing dislocation density of polycrystalline silicon wafers, reducing oxygen and carbon concentrations, narrowing resistivity distribution, and improving optimization. The full-melt and semi-melt crystal growth processes are introduced. In terms of polycrystalline silicon wafers, with advanced nucleation technology, high-purity materials and optimized resistivity, to provide options for higher efficiency requirements; in the case of single crystal silicon wafers, more advanced CCz technology has lower and more uniform oxygen content and metal impurities The accumulation speed is slower, the axial resistivity distribution is uniform, and the fluctuation can be controlled within 10%, which is more suitable for high-efficiency N-type and gallium-doped P-type batteries.
Relying on the research and development achievements of the key laboratory of silicon-based electronic materials and the first-line research of many experts, GCL-Poly's "TS ＋" second-generation black silicon wafer texturing cost has been reduced by about 30%, and black silicon has been obtained at a cost close to traditional texturing. Conversion efficiency, battery efficiency gain will be increased to 0.5%, leading the country's more than 100 black silicon production lines, 23 GW black silicon production capacity to reduce costs and improve efficiency, the future "King Kong line + black silicon + PERC" technology will become 300W + polycrystalline Components are standard. In addition, relying on the research and development results of the laboratory and improving the growth of the crystal equipment process, customers reported that GCL-Poly's ingot single crystal superimposed with PERC technology has a difference of only 0.18% with Cz single crystal, and high-efficiency ingot single crystal components (60 pieces) Can be packaged to 310W, and the cost is greatly reduced. Using the ingot process characteristics and gallium-doped technology, the light decay of the ingot single crystal is more than 0.5% lower than that of the Cz single crystal product. Since 2011, Jiangsu GCL Silicon Materials has successively launched "Xin monocrystalline" G series and "Xin polycrystalline" S series of high-efficiency silicon wafer series products, which continue to lead the efficient trend of the global photovoltaic industry.
Jiangsu Provincial Key Laboratory is one of the important infrastructures of the provincial regional scientific and technological innovation system. It is established by relying on key scientific research institutes and scientific and technological enterprises with strong scientific research capabilities in this field, focusing on applied basic research and high-tech research. Aiming at the forefront of international disciplines. In 2015, with the approval of the Jiangsu Provincial Department of Science and Technology, Jiangxi GCL Silicon Materials in Xuzhou began to build a key laboratory for silicon-based electronic materials. After more than three years of construction, the laboratory has successfully completed various assessment tasks and passed the inspection and acceptance of the expert group of the Provincial Science and Technology Department in April 2018. Recently, Jiangsu Provincial Key Laboratory of Silicon-based Electronic Materials was approved by the Provincial Department of Finance and Science and Technology Department as a subsidy of 30 million yuan.
As early as 2011, Jiangsu GCL Silicon Materials R & D Center, which was established for more than a year, has cooperated with the State Key Laboratory of Silicon Materials of Zhejiang University to carry out industry-university-research project cooperation. In 2013, the cooperation projects between the two sides were supported by special funding for major scientific and technological achievements in Jiangsu Province. Since 2014, the R & D center has successively established industry-university-research cooperation relationships with Nanjing University of Aeronautics and Astronautics and China University of Mining and Technology. After 2015, the R & D center is based on the professional platform of “Jiangsu Key Laboratory of Silicon-based Electronic Materials”. It integrates patented technology into production applications, and the scientific and technological achievements have been fruitful.
As the world's leading R & D and manufacturing base for ingots and chips, Jiangsu GCL Silicon Materials will further broaden its disciplines, strengthen research on new functional materials such as solar silicon materials, silicon-based optoelectronic materials, and continuously improve the level of scientific and technological achievements.