As a representative of the third-generation semiconductor materials, silicon carbide crystals have broad application prospects in energy-saving and environmental protection fields such as electronic power devices and high-brightness light-emitting diodes. However, the preparation of silicon carbide crystals has problems such as high cost and low energy efficiency, which limits the large-scale application of silicon carbide crystals in civil fields.
The Silicon Carbide Crystal Project Department of Shanghai Institute of Ceramics, Chinese Academy of Sciences draws on the multi-crucible descending crystal preparation technology invented by Shanghai Silicate. Based on a deep understanding of the basic scientific and technological principles of vapor transport and deposition, it has invented a multi-head physical vapor The transportation technology successfully realized the preparation of multiple silicon carbide crystals in a single pass, and the consistency, repeatability and stability of the obtained crystals were significantly improved. The multi-head physical vapor transport technology is used to increase the crystal preparation efficiency to more than 300% of the traditional preparation technology, and the preparation cost is reduced to less than 40%. It is expected to achieve low-cost and high-efficiency silicon carbide crystal preparation, effectively promoting its Large-scale applications in the civilian field.