On February 20, silicon carbide (SiC) and gallium nitride (GaN) manufacturers, ZJLX Technology, announced that the company will invest in new silicon crystal materials and preparation projects.
ZJLX Technology stated that the company will continue to focus on the third-generation semiconductor crystal industry and expand the application of silicon carbide (SiC) in 5GGaN-on-SiCHEMT, SiCSBD, SiCMOSFET, SiCIGBT and other component chips. The product is 4-6 inches semi-insulating Wafers and 4H crystal N-type conductive silicon carbide substrate wafers and other products.
According to data from the China Wide Band Gap Power Semiconductor and Application Industry Alliance, the current mainstream semi-insulating substrate products are still mainly 4 inches. In 2017, the global market demand for semi-insulating substrates was about 40,000. It is estimated that by 2020, the market for 4-inch semi-insulating substrates will remain at 40,000, while the market for 6-inch semi-insulating substrates is expected to increase rapidly to 4-5. 10,000 wafers; from 2025 to 2030, 4-inch semi-insulating substrates will gradually withdraw from the market, while 6-inch wafers will grow to 200,000.
Industry analysts believe that semiconductor silicon carbide substrates and chips have important strategic value, and because semi-insulating substrates have high resistance and can withstand higher frequencies, in the era of 5G communication and a new generation of intelligent interconnection, they will have more Broad application space.
Li Chentao, technical director of ZJLX, said that the company successfully developed silicon carbide crystal growth equipment with the support of the original sapphire production technology. The planned increase of funds will be invested in silicon carbide crystal materials and preparation projects. , For the company to create a stronger competitiveness in the core material supply field of the 5G communication industry.