On July 30, China's leading silicon carbide (SiC) and gallium nitride (GaN) substrate manufacturer ZJLX Electronic Materials Technology Group invested 700 million yuan to build a SiC substrate project officially started construction.
The total planned investment of the project is 695 million yuan. The project mainly adopts silicon carbide sublimation crystal growth technology and SiC substrate processing technology, and introduces internationally advanced 6-inch conductive crystal growth furnace, 4-inch high-purity semi-insulating crystal growth furnace and other equipment , The purchase of domestic equipment such as multi-wire cutting machines, polishing machines, etc., will form an annual production capacity of 88,000 silicon carbide substrates after completion.
ZJLX stated that in order to meet the company’s continuous development needs and develop the company’s strategic emerging industries with new technologies and new products, the company has successfully developed silicon carbide growth equipment with the support of the original sapphire production technology. The non-public issuance of shares mainly raises funds For investment in the production of silicon carbide crystal materials and R&D centers, the company will continue to focus on the third-generation semiconductor crystal industry and expand the application of silicon carbide in 5G GaN-on-SiC HEMT, SiC SBD, SiC MOSFET, SiC IGBT and other component chips , To produce 4-6 inch semi-insulating sheet, 4H crystal N-type conductive silicon carbide substrate sheet and other products.