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China Silicon Carbide Materials and Silicon Carbide Device Technology Company builds new R&D and production base for silicon carbide substrates Hay:I01ZJLX

On the evening of November 30, China Leading Silicon Carbide Materials and Silicon Carbide Device Technology Company, ZJLX Electronic Technology Group announced that the company’s application for non-public offering of shares was approved by the China Securities Regulatory Commission.

ZJLX`s previous non-public issuance plan shows that the total amount of funds to be raised in this non-public issuance will not exceed 1 billion yuan (including 1 billion yuan), and the number of shares to be issued will not exceed 453 million shares (including the number), which will not exceed this non-public issuance. 30% of the former total equity.

The fixed-increasing investment projects include "newly built silicon carbide substrate sheet industrialization project", "silicon carbide R&D center project" and "repaying bank loans". Among them, the new silicon carbide substrate sheet industrialization project plans to invest 650 million yuan to produce silicon carbide substrate sheets and other products to meet the rapidly growing market demand for silicon carbide substrate sheets of 6 inches and above in China and abroad.

It is reported that the third-generation semiconductor is an important development content "beyond Moore's Law." As the third-generation wide-bandgap semiconductor material, silicon carbide has a wider forbidden band width, higher breakdown electric field, higher thermal conductivity, greater electron saturation drift speed and higher radiation resistance. The ideal material for manufacturing high-temperature, high-frequency, and high-power semiconductor devices is an important direction for the development of the semiconductor industry in the future. It will become a “new infrastructure” supporting 5G network construction, new energy vehicles and charging piles, UHV power transmission and transformation, and rail transit. The key core material.

Hay Think understands that ZJLX began to form a silicon carbide crystal growth furnace manufacturing research team in the second half of 2018. In July 2019, it successfully developed a crystal growth furnace and began mass sales; in September 2020, it signed a silicon carbide industrial park investment project, November Construction officially started on the 28th.

At present, the global silicon carbide market is basically monopolized by foreign companies. ZJLX said that it intends to use this fixed increase as an opportunity to mass-produce 6-inch semi-insulating and conductive silicon carbide substrates, and expand the use of silicon carbide in 5GGaN-on-SiC high electron mobility transistors (HEMT) and SiC Schottky diodes. (SBD), SiC metal oxide semiconductor field effect transistor (MOSFET) and other components and chip applications.

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