On December 3, China's compound semiconductor industry chain manufacturing platform-XMSA Integrated Technology Group announced that it has completed the construction of a mass production platform for silicon carbide MOSFET devices. The first 1200V 80mΩ product has been developed and passed a series of product performance and reliability tests. It can be widely used in photovoltaic inverters, switching power supplies, pulse power supplies, high-voltage DC/DC, new energy charging and motor drive applications. Helps reduce the system volume, reduce system power consumption, and increase the power density of the power supply system. Many customers are currently in the sample testing stage.
The 1200V 80mΩ silicon carbide MOSFET introduced this time, compared with traditional silicon-based IGBT power devices, the wide band gap silicon carbide material has the characteristics of "higher, faster and stronger"-higher withstand voltage and heat resistance , Faster switching frequency, lower switching loss.
Due to the device structure, the body diode of the silicon carbide MOSFET is a PiN diode, which has a high turn-on voltage and large loss. In actual use, Schottky diodes are often connected in parallel for freewheeling to reduce system losses. XMSA's silicon carbide MOSFET greatly enhances the current capacity of the silicon carbide body diode by optimizing the device structure and layout, without the need for additional parallel diodes, reducing system cost and system volume.
How to obtain a high-quality silicon carbide gate oxide structure is a common problem in the industry. The quality of the gate oxide will not only affect the channel current capacity of the MOSFET, but also cause the threshold drift phenomenon, and in severe cases, it will lead to reliability failure. Through trial and error and optimization of gate oxide conditions, Sanan Integration has significantly improved the stability of the threshold voltage, and the threshold drift of 1000hr is within 0.2V.
At present, there are continuous shortages of silicon carbide MOSFETs in the industry, and XMSA is accelerating the production capacity expansion of silicon carbide devices. In July this year, the construction of the silicon carbide full industrial chain park in the high-tech zone started with a planned total investment of 16 billion yuan, covering an area of 1,000 mu. At present, the main construction of the first phase of the project has been erected, and it is planned to start trial production in June 2021. A modern manufacturing base for the entire industry chain will be established that comprehensively covers silicon carbide crystal growth, substrate, epitaxy, wafer manufacturing and packaging and testing.
About XMSA
XMSA established a compound semiconductor manufacturing platform which combines process technologies for microwave radio frequency, high power electronics, and optical, by having in-house capability and vertical integration of substrate materials, epitaxy growth and wafer fabrication. XMSA owns large scale of MOCVD epitaxy growth production lines and the most advanced process technologies.
Products
Power Electronics
The advance of an energy-efficient world lies in the next generation power conversion technique using wide bandgap (WBG) power devices (eg, silicon-carbide (SiC) or gallium-nitride (GaN) based). Compared with conventional Si based devices, XMSA silicon-carbide (SiC) and gallium-nitride (GaN) power devices can operate at higher voltage and temperature. Also, they can switch at faster speeds with lower switching losses. This allows for greater power efficiency, smaller size, lighter weight, lower overall cost of power systems. Currently, the evolutionary WBG solutions are taking hold in various application field: Power adapters for consumer electronics, Data centers, Electric Vehicles (EV), Industrial motors, wireless charging, and energy harvesting.
Radio Frequency
With abundant wafer foundry resources and advanced manufacturing technology, XMSA can meet the customers' requirements on RF wireless communication and millimeter wave. XMSA provided OEM services include complete foundry process, including Design support, Device model guide book, process Design suite (PDK), computer aided Design (CAD) and other parameter databases, so as to provide customers with a convenient Design environment. In addition, XMSA provides complete product testing service, and work with customers to accelerate product development.
Optical Devices
XMSA provides world class wafer foundry services for III-V compound semiconductors and offers high quality processes with exceptional service. In the fields of optical communications and photonics, It offers wafer fabrication for customized singulated VCSELs and arrays, DFB lasers, photodiodes, avalanche photodiodes ( APDs), monitor photodiodes (MPDs), and other high-speed optical products. Capabilities include high-power visible and infrared VCSELs, edge-emitting lasers for 3D sensing, LiDar and several consumer applications.