On September 10, 2019, SDJN Semiconductor Material Technology Group, the world's leading professional manufacturer of GaN epitaxial materials, held a grand ceremony for the "8-inch GaN epitaxial material project production and product release ceremony" invested and constructed.
The completed capacity of the first phase of the project is 60,000 6-8 inch GaN epitaxial wafers per year.
SDJN released a series of 6-8 inch GaN epitaxial wafer products on the spot, and made relevant introductions to the projects and products. Among them, 8-inch silicon-based gallium nitride epitaxial wafers and 6-inch silicon carbide-based epitaxial wafers can meet the needs of next-generation power and microwave electronic devices for large-size, high-quality, high-consistency, and high-reliability gallium nitride epitaxial materials The demand for 5G communications, cloud computing, new consumer electronics, smart white electricity, new energy vehicles and other fields provide material guarantee for core components.
SDJN masters the world's leading 8-inch silicon-based gallium nitride epitaxy and 6-inch silicon carbide-based epitaxial growth technology. In the field of power device applications, the product series include 8-inch AlGaN/GaN-on-Si epitaxial wafers and 8-inch P-cap AlGaN/GaN-on-Si epitaxial wafers. At the same time, Joneng Epistar has innovatively applied its advanced 8-inch GaN epitaxy technology to the microwave field, and developed 8-inch AlGaN/ which has high performance and large size, low cost, and is compatible with standard 8-inch device processing technology. GaN-on-HR Si epitaxial wafer. In addition to silicon-based gallium nitride, Joneng Jingyuan also has an AlGaN/GaN-on-SiC epitaxial wafer product line to meet customer needs for silicon carbide-based gallium nitride epitaxial materials.
SDJN displays HVA650/HVA700 8-inch AlGaN/GaN-on-Si epitaxial wafer products. This type of GaN epitaxial wafer has the characteristics of high crystal quality, low surface roughness, and high consistency. At the same time, it has the electrical characteristics of low on-resistance, high withstand voltage, low leakage and high temperature resistance. It is worth mentioning that SDJN's GaN epitaxial wafer has excellent material reliability. According to the standard TDDB test method, its long-term effective life under the nominal withstand voltage has reached 109 hours, which is at the leading level in the international industry. Using SDJN's GaN epitaxial wafers, customers can achieve advantages such as high performance, high consistency, high yield, and high reliability when developing GaN devices, helping customers seize the competitive opportunities in the field of third-generation semiconductor devices.