Recently, HNDL Advanced Materials Technology Group has achieved important breakthroughs in carbon powder purification technology to meet the domestic substitution trend and was awarded the third-generation semiconductor invisible leader.
In terms of new material silicon carbide single crystal, HNDL has mastered the technology of purifying carbon powder of 5N and below to 6N and above, and the performance index of high-purity carbon powder developed by HNDL has reached the international leading level.
Pure silicon carbide powder is the key raw material for silicon carbide single crystal growth, and the purity of silicon carbide powder is particularly important. In order to control the impurity content in silicon carbide powder, it is necessary to use high-purity graphite powder and silicon powder.
In addition to high-purity carbon powder, thermal field materials for crystal growth equipment developed by HNDL, heaters, graphite crucibles, and high-temperature ablation and oxidation-resistant coating products are all key materials and equipment for preparing third-generation semiconductors—silicon carbide.
HNDL is China`s largest research and production base for carbon/carbon and carbon/silicon carbide composite preforms. It has a monopoly in the military field. It is the only supplier of domestic civil aviation aircraft C919 and ARJ21 carbon brake preforms.”