On January 15, the annual production base of 110,000 silicon carbide substrates invested and constructed by SDGH Electronic Technology Group was officially put into production.
The project has a total investment of 650 million yuan and a total construction area of 30,000 square meters.
SDGH currently produces 4-inch and 6-inch 4-H N-type conductive silicon carbide substrates and 4-H semi-insulating silicon carbide substrates. The company has a strong scientific research capability of "the third generation of semiconductor material preparation and construction of common technology engineering laboratories", has formed a key core technology system with independent intellectual property rights, and product technical indicators have reached the domestic first-class level. The silicon carbide substrate products produced can be widely used in power electronics applications represented by new energy vehicles, high-speed rail transit, ultra-high-voltage smart grids, and 5G communications, aerospace communications, military phased array radars, etc. High frequency radio frequency application field.
"After the SDGH silicon carbide substrate wafer project is put into production, it can not only meet the needs of China's third-generation semiconductor downstream companies for core key materials, but also effectively solve China's technical bottlenecks in the field of large-scale, high-quality silicon carbide semiconductor wafers. 'The problem is to ensure the continuous, stable and healthy development of China's third-generation semiconductor downstream industry. While opening up the domestic market, the company will also actively participate in international market competition.