On February 28, China's high-purity silicon carbide powder, high-purity silicon carbide material, and high-purity semi-insulating wafer manufacturer ZGDK silicon carbide material industrial base held a production ceremony.
The silicon carbide material/silicon carbide single crystal substrate material R&D center and production base that will be put into operation this time will be the most powerful silicon carbide (SiC) material supply base in China with the third largest production scale.
The construction area of the first phase of the project is 27,000 square meters, capable of accommodating 600 silicon carbide single crystal production furnaces and the processing and testing capacity of 180,000 N-type wafers, which can form a capacity of 75,000 silicon carbide wafers, which will completely solve the foreign The situation of silicon carbide blockade is fully autonomous.
After the project is put into production, it will become the top three silicon carbide production enterprises in China and the top ten in the world, with an annual output value of 1 billion yuan.