On Nov 8, 2022, China SZJZ Semiconductor Materials Technology Corporation released its full-color series epitaxial film product – Full Color GaN for Micro LED display industry applications. The size of the new epitaxial film has been successfully expanded to 300 mm.
Full Color GaN is a silicon based GaN on Si epitaxial chip, which has a larger wafer size (200mm-300mm) and better surface quality, and has unique advantages in improving the yield of LED chips.
In addition, by using the advanced silicon chip process in the 200mm/300mm FAB, the epitaxial chip can prepare high-performance micro (5m2) Micro LED pixel array, and can be mixed and integrated with the Si CMOS driver with high yield.
Through the use of patented technologies such as stress engineering and polarization engineering, SZJZ's Full Color GaN series products successfully overcome the problem of epitaxial growth of high efficiency red LEDs.
In addition, SZJZ pointed out that wavelength uniformity is the key factor to achieve Micro LED display, while Full Color GaN full-color series products have excellent wavelength uniformity on the entire 200mm wafer, and blue LED wafers can be up to 300mm in size, with excellent wavelength uniformity, and the standard deviation of the whole chip is less than 2nm.
In terms of defect density, SZJZ said that the surface defect density of Full Color GaN series products can be controlled within 0.1/cm2. Even if the pixel size is reduced to 2m x 2m (array: 100 x 100), all pixels can still be lit.
For the monolithic integration of Micro LEDs, integrating RGB colors into a single GaN material platform is a critical step.
Full Color GaN series epitaxial chips will initially meet the requirements of the industry for the AR/MR system. The 300 mm GaN epitaxial silicon substrate will promote the development of GaN optoelectronic devices, GaN electronic devices and the heterogeneous integration of silicon devices, and has broad application prospects.