On December 07, China's leading third-generation semiconductor silicon carbide single crystal substrate technology company, HBTG Electronic Materials Technology Group, issued an announcement that the company will build a new 6-inch silicon carbide substrate project.
With the development of industries such as 5G and electric vehicles, related companies in the silicon carbide industry will usher in opportunities for rapid growth. HBTG has a wealth of technology accumulation and talent reserves in the field of third-generation semiconductor substrates, which will help accelerate the localization of substitution and has a good market prospect.
HBTG is committed to the independent R&D and innovation of the third-generation semiconductor silicon carbide single crystal substrate preparation technology. It has built a complete production line for powder synthesis, crystal growth, cutting processing, and crystal inspection, with an annual output of 4-6 inches silicon carbide substrates Tens of thousands of pieces.
At present, HBTG's 4-inch high-purity semi-insulating silicon carbide substrate is mainly used to manufacture high-end radio frequency chips, and its technical indicators have reached the international advanced level; in terms of conductive substrates, HBTG's 6-inch products meet power electronic devices All aspects of the technical requirements of the company have met the conditions for mass production and have been applied in well-known customers.
In addition, HBTG has established joint laboratories with many well-known universities such as Peking University and Tsinghua University, and built academician workstations, and introduced many well-known academicians in the semiconductor field to guide the company's technological innovation direction.