In the semiconductor field, the overall performance of power devices has always been known for stability, but in recent times the industry has become increasingly popular, and news of related investment and expansion continues to emerge. This is closely related to the rapid growth of market demand.
Under China's policy incentives, the market has increasingly strong demand for power electronic equipment, which has added fire to the development of the power semiconductor device industry. China Microelectronics, which has been deeply involved in the field of power semiconductors for many years, also carries its own advantages and takes the lead in entering the new infrastructure track to boost the development of the industry.
In the past half-century, JLHW has continued to break through many key technologies, accelerate the localization of power semiconductor devices, and help the development of China's industrial base and national industry, and become an internationally competitive power semiconductor company.
Nowadays, with the increasing competition of low-end products in China's power semiconductor device market and heavy dependence on imports for mid-to-high-end products, JLHW has also accelerated the promotion and R&D layout of high-end products. Starting in 2016, JLHW has begun planning to produce high-performance power devices. , Including super junction MOSFET, CCTMOSFET, Trench FS IGBT, ultra-high voltage fast recovery diode, Trench Schottky products and high-power IGBT modules.
In the next few years, with the emergence of new energy vehicles, 5G communications and other emerging industries, the demand for power semiconductors is bound to continue to grow. As one of China’s leading major power semiconductor manufacturers, JLHW has a full range of power semiconductor devices. In the category, as China's power semiconductor device market maintains rapid and stable growth, JLHW will also usher in a fast lane of development.
JLHW is a strong competitor to replace imports
As a global automotive and industrial power, China is the world's largest power semiconductor device market. However, in the rapid economic development, foreign countries are trying to prevent the rise of China, especially the United States has created obstacles to the development of China's high-tech technology. The ZTE and Huawei incidents have sounded the alarm for the development of China's power semiconductor industry. At present, China's power semiconductor market Controlled by American, European and Japanese brands, it has an absolute advantage in the domestic market, with a market share of more than 60%.
Since its establishment, JLHW has been committed to building chip manufacturing capabilities, expanding the scale of production lines, and improving chip delivery capabilities. It currently has 4-inch, 5-inch and 6-inch power semiconductor chip production lines with a processing capacity of 4 million chips per year. An 8-inch production line is under construction , The designed production capacity is 960,000 pieces/year, the single-tube packaging resource is 2.4 billion pieces/year, and the IPM module packaging is 18 million pieces/year.
After more than half a century of technology accumulation, JLHW has a number of patents and process know-how in terminal design, process manufacturing and product design, especially in terms of IGBT wafer process, Trench process, life control and terminal design technology. The core technology has reached the leading level in China and the international advanced level in the same industry. Among them, the five key technologies of IGBT products, including sheet manufacturing technology, transparent collector IGBT manufacturing technology, vertical and horizontal structure design technology, back injection and activation, and silicon wafer testing technology have all overcome difficulties, and the research and development have been completed 600V-650V, 1200V-1350V IGBT products, which adopt the international mainstream Trench-FS technology, are mainly used in the fields of new energy electric vehicles, inverter home appliances and induction cookers. After Trench MOS has experienced several generations of product development, it has successfully solved the deep trench etching technology, barrier metal deposition technology, W back-etching technology, etc., and has completed the product development of 30V-250V.
"To achieve localized substitution, the main difficulty currently facing JLHW is the acceptance of domestic semiconductor power devices by customers, mainly in new application fields and high-end applications. Customers need to give certain opportunities and time to domestic brands and customers. Opportunities for running-in.” JLHW said that at the moment, the company’s main problem is to strengthen communication and improvement with customers in product applications, and to develop customized products that are more suitable for application scenarios based on customers’ actual application needs. And this is gradually being realized. JLHW's products are widely used in consumer electronics, automotive electronics, power electronics, industrial control and LED lighting and other fields, and continue to rapidly develop in strategic emerging areas such as new energy vehicles, photovoltaic inverters, and rail transit. Expansion is a supporting supplier of well-known domestic and foreign companies such as Philips, Panasonic, Hitachi, Hisense, Skyworth, and Changhong.
Towards a high-end segment
The application of JLHW's high-end products in industry, automotive electronics, 5G, charging piles and other fields has achieved certain results and has been recognized by well-known domestic companies.
Speaking of future development, JLHW said that it will continue to focus on the company’s traditional power semiconductor chip manufacturing, continue to expand and strengthen its chip manufacturing capabilities, develop vertically to establish an 8-inch chip production line, and achieve high-end VDMOS and IGBT device manufacturing to meet the rapid growth of Market needs, expand horizontally to establish a silicon epitaxial production line to ensure the safe supply of materials, establish a packaging and test production line, focus on building a module production line, develop towards high voltage and high power, build a power semiconductor industry manufacturing base, improve the power semiconductor industry chain, and accelerate the localization of power semiconductors process.
"JLHW will continue to develop the IDM advantage of independent research and development and platform construction, and continuously upgrade the performance and quality of silicon-based power devices. The company has a full power device process platform such as IGBT, MOSFET, diode, SCR and BJT, including single tube, IPM In the future, the company will continue to take power semiconductors as its main technology development direction, and gradually establish a supporting driver IC production line in combination with the company’s market areas.” JLHW said that the company will take further steps in the medium and low voltage MOSFETs. Upgrading the existing technology platform, the second-generation CCT MOSFET will be launched soon. Taking 100V products as an example, the on-resistance per unit area reaches 40 milliohms. Improve the product voltage level, establish a full range of voltage platforms from 10V to 250V products, in addition to applications in the consumer field, expand to server power, 5G, industrial, artificial intelligence and automotive electronics.
For high-voltage MOSFETs, the second-generation super-junction MOSFET products will be launched at the end of this year to further enhance the durability and efficiency of this series of products, which are used in charging piles and base station power supplies. In the next 2 to 3 years, we will continue to upgrade the super junction MOS platform, adopt a multi-layer epitaxial structure, and develop the third generation super junction MOS platform to achieve performance consistent with international brands. The product series covers 500V-900V, 4A-72A Series, can meet the product needs of various fields.
"FRD diodes and IGBTs have always been our core products. In the next 2 to 3 years, we will devote ourselves to the development of ultra-high voltage product series for rail transit and power grids. The voltage covers 1700V~6500V." JLHW also said, In terms of Trench Schottky, the company has completed the construction of the Trench SBD platform for 45V, 60V, and 100V products, and is developing 80V, 150V product platforms with adjustable barrier height technology, which can meet customers’ higher requirements for use efficiency. It has higher reliability and is used in photovoltaic and power supply fields. In addition, JLHW actively deploys GaN and SiC devices, develops and produces enhanced GaNHEMTs, first develops GaN devices and application solutions in the fast charging field, and then transitions to the field of industrial and communication power supplies; for SiC devices, it has developed 650V SBD diodes. The products will be further expanded to 1200V diodes and SiC MOSFETs, mainly used in new energy vehicles and charging piles.