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Chinese 6-inch conductive/semi-insulating silicon carbide substrate wafer and sapphire crystal production base put into production Hay:I01ZJJS

On the morning of December 3, ZJJS Electronic Materials Technology Corporation's newly-built industrial sapphire crystal manufacturing deep-processing production workshop successfully rolled off the production line with an annual output of 3,500 tons of industrial sapphire products.


The company's annual production of 400,000 pieces of silicon carbide semiconductor material project has also successfully realized commercial production.

Industrial Sapphire Crystal Manufacturing Deep Processing Project


The first phase plans to invest 2.3 billion yuan, with a construction area of 73,000 square meters, and install 1,152 300KG sapphire crystal growth furnaces and cutting, grinding and polishing equipment.


6 inch and above conductive and semi-insulating silicon carbide substrate wafer project


The project with an annual output of 400,000 pieces of silicon carbide semiconductor materials. The project is constructed in two phases, with approximately 75,000 square meters of workshops and auxiliary facilities. It mainly produces 6-inch and above conductive and semi-insulating silicon carbide substrate wafers. The investment in the first phase is 3.36 billion yuan, and the annual output of 6-inch silicon carbide wafers will be 400,000 after completion.

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