Recently, ZJZD Semiconductor Materials Technology Group has successfully developed the first batch of gallium oxide single crystal substrates. This is another important progress made after obtaining bulk gallium oxide single crystals last year, marking ZJZD's high-level research and development ability in the field of material processing.
The conductivity type of this batch of gallium oxide single crystal substrates is semi-insulating, with a size of 25.4 mm, a thickness of about 800 μm, and a surface roughness of less than 0.5 nm. The high-resolution X-ray rocking curve test measured a half-height width of 47.5 arcsec. The peaks are uniform and symmetrical, and the single crystal quality is better. The above key technical indicators have reached the advanced level in the field.
Silicon material is currently the most commonly used material for semiconductor devices, but its performance has gradually reached the theoretical limit. Wide-gap semiconductors (silicon carbide, gallium nitride and gallium oxide) have the potential to make higher-performance devices.
Wide bandgap semiconductors have superior properties such as high frequency, high efficiency, high power, high pressure resistance, high temperature resistance, and strong radiation resistance. It is a key core material supporting a new generation of mobile communications, new energy vehicles, high-speed rail trains, energy Internet and other industries And electronic components.
As an ultra-wide bandgap semiconductor material, gallium oxide (β-Ga2O3) has a band gap of 4.9 eV, which is larger than silicon carbide (3.3 eV) and gallium nitride (3.4 eV), with a breakdown field strength of 8 MV/cm. Semiconductor devices made of gallium oxide can be thinner, lighter, and more resistant to high voltage. At present, the maximum breakdown voltage of a metal oxide semiconductor field effect transistor (MOSFET) based on gallium oxide can reach 8000V.
With the breakthrough progress of crystal growth technology in recent years, gallium oxide has gradually become a research hotspot in the field of semiconductors in the world. Due to the easy cleavage characteristics of gallium oxide single crystals, its crystal processing is difficult, and the current conventional silicon single crystal processing methods are not completely suitable for gallium oxide. Therefore, the processing of gallium oxide single crystal substrates requires further optimization of the cutting, grinding and polishing process. The production of high-performance semiconductor devices is inseparable from high-quality substrate materials. The gallium oxide single crystal substrate of the Advanced Semiconductor Research Institute of Science and Technology Innovation Center will provide strong support for the research of gallium oxide-related devices.
About ZJZD
ZJZD takes the research and development and industrialization of wide-gap semiconductor materials and power chips as its core, and uses packaging, testing and application technology as its service support. It focuses on breakthroughs in the growth of wide-gap semiconductor materials and new structure design and advanced technology for wide-gap semiconductor power chips. Technology development and other key technical bottlenecks, solve a number of "stuck neck" technical problems in the semiconductor field, promote the rapid development of semiconductor materials, chips, and integrated packaging and test industrialization technologies, and improve China's international competitiveness and influence in the field of wide-bandgap semiconductors Force.