Recently, ZGDK Electronic Materials Technology Corporation [China's leading manufacturer of high-purity semi-insulating silicon carbide single crystal substrates] successfully realized the commercial production of high-voltage-performance semiconductor material-HVPE gallium oxide homoepitaxial wafers. China blank.
Gallium oxide is a new type of ultra-wide bandgap semiconductor material with excellent physical and chemical properties, and has broad application prospects in the fields of microelectronics and optoelectronics. The gallium oxide homoepitaxial wafer prepared by the HVPE method has the characteristics of high crystal quality of the epitaxial layer and controllable electrical parameters. "It can improve the withstand voltage value of related devices, greatly reduce power loss, and make them perform better.
For a long time, China's gallium oxide epitaxial wafers have relied on imports.
At the beginning of 2016, ZGDK established a project team to carry out the research and development of gallium oxide homoepitaxial wafers.
At the end of 2018, HVPE gallium oxide homoepitaxial wafers that meet the application requirements of power devices were successfully prepared.
"The technological breakthrough of HVPE gallium oxide homoepitaxial wafers benefits from our accumulated experience in the field of HVPE for many years, but also from our insistence on independent research and development." ZGDK's CTO Dr. Wang said that during the research and development process, the team not only achieved The breakthrough of technology has also applied for a number of invention patents. At the same time, the team combined the advantages in the preparation of gallium oxide single crystal substrates to break through the barrier of gallium oxide from single crystal to device application, and promoted the development of gallium oxide-based power devices in China.
"The successful development and application of gallium oxide homoepitaxial wafers to device development is a major breakthrough in the field of basic frontier research and the application of key core technologies, which greatly strengthens our confidence in the transformation of HVPE methods from technical research to engineering." Dr. Wang said that the team will focus on making breakthroughs in the development of larger-sized, high-quality gallium oxide homoepitaxial wafers to further optimize the quality of epitaxial wafers.