SDTY Semiconductor Material Technology Group was established in 2006 and is a high-tech enterprise mainly engaged in silicon carbide semiconductor substrate materials. The company has invested and built a third-generation semiconductor material industrialization base, with the software and hardware conditions for R&D and production of internationally advanced semiconductor substrate materials, and is an advanced enterprise in the third-generation semiconductor substrate material industry in China.
SDTY is the chairman unit of the China Wide Bandgap Semiconductor Industry Alliance under the supervision of the Ministry of Industry Information of China, and the vice chairman unit of the China Strategic Emerging Industry Enterprise Council. The company has national platforms such as the “National and Provincial Joint Engineering Research Center for Silicon Carbide Semiconductor Material R&D Technology”, a national postdoctoral research station, and 2 provincial R&D platforms. It has more than 290 patents, including more than 80 invention patents. First prize for first-class technological invention. The company has strong technical force, with 4 R&D centers abroad, a domestic R&D team led by more than ten PhDs, and more than 60 industry experts at home and abroad. The company has undertaken more than ten national, provincial and ministerial-level scientific research and industrialization projects, including the national new material research and development and industry special project, the national 863 plan project, and the national major scientific and technological achievement transformation special project.
Conductive silicon carbide substrate material
6-inch N-type silicon carbide substrate material is an important material necessary to support the development of the power electronics industry. Its outstanding physical properties such as high-voltage resistance and high-frequency resistance can be widely used in high-power high-frequency electronic devices , electric vehicle PCU, photovoltaic inverters, rail transit power control systems and other fields, which can reduce the volume and simplify the system and increase the power density.
4-inch semi-insulating substrate material
6 inch 4H conductive silicon carbide substrate