The global most powerful information hub of high performance & advanced materials, innovative technologies

to market your brand and access to the global demand and supply markets

Chinese leading manufacturer of Silicon carbide (SiC) power devices, silicon carbide chips, silicon carbide diodes, silicon carbide wafers Hay:I06BJTR

BJTK Semiconductor Technology Group is a leader in the industrialization of silicon carbide (SiC) power devices in China. BJTK is committed to the development of China's semiconductor power device manufacturing industry, and provides high-quality semiconductor power device products and professional services to global power device consumers.

BJTK has a complete semiconductor process wafer plant, which can realize the manufacturing process of semiconductor power devices on 4/6 inch SiC wafers. As a Chinese silicon carbide R&D, production and platform service company, BJTK's product line involves basic core technology products, silicon carbide molding products and multiple sets of industry solutions. At present, BJTK's silicon carbide devices 650V/2A-100A, 1200V/2A-50A, 1700V/5A-50A, 3300V/0.6A-50A and other series of products have been put into mass production, and the product quality can completely match the advanced level of the international industry. .

Silicon carbide chips have been widely used in high-power LED power supplies, PC POWER, communication power supplies, as well as photovoltaic inverters, as well as automotive power supplies, such as OBC, DCDC and other applications. In these application areas, BJTK has basically achieved mass shipments and has benchmark customers. There are also great breakthroughs in technology. BJTK is the first silicon carbide manufacturer in China to obtain a third-party AEC-Q101 certified reliability test report.

BJTK's recent innovative products

The new ultra-thin silicon carbide package products

New ultra-thin silicon carbide packaging products.jpg

These new products are relatively thin and are compared with the traditional TO chip package (Transistor Outline). The thickness is only 1mm. DFN8*8 also has no pins, which can reduce the problem of parasitic inductance.

650V 1A SOD123 is the world's first and smallest silicon carbide diode. These ultra-thin new packages are very suitable for power supply applications with very strict requirements on volume, such as PD fast charging.

Silicon carbide wafer

Silicon carbide wafer.jpg

Through joint exploration and development with industry counterparts, scientific research institutes, and domestic and foreign experts, BJTK is promoting SiC power devices to more and more applications.

Please check the message before sending