On October 16, SXLK Crystal Technology Group's 6-inch silicon carbide substrate was successfully developed and will be mass-produced. This means that China's national production technology and equipment production of silicon carbide substrates will soon meet the international advanced level.
In addition, the company`s 8-inch silicon carbide (SiC) substrate has also been successfully developed.
The first phase of the SXLK silicon carbide industrial base project started construction in April 2019 and was put into production in March this year. The construction period was only 11 months. It is reported that the first phase of the project can accommodate 600 silicon carbide single crystal production furnaces and 180,000 pieces of N-type wafer processing and inspection capabilities, which can form 75,000 pieces of silicon carbide wafer production capacity, and this is also SXLK's silicon carbide substrate since 2007 The results of the development layout. However, there is still a big gap between the 4-inch manufacturing process and the international 6-inch level, and Cree, as a global leader, has begun to build an 8-inch mass production plant.
At the same time, SXLK has developed a complete set of silicon carbide material development lines from silicon carbide powder preparation, crystal growth, wafer processing, and epitaxy verification. It is the first in China to achieve mass production of high-purity silicon carbide materials and high-purity semi-insulating wafers, and is under construction. After the project is put into production, it will achieve an annual production capacity of 150,000 pieces, which is the top three in the world and solves the problem of core material supply in China's semiconductor field.