Charge-coupled device (CCD) and charge storage device (Memory), as two independent branches in modern electronic systems, have developed along their respective paths. Prototype devices with photoelectric sensing and storage functions have not been reported yet. Recently, researchers from the Shenyang National Research Center for Materials Science of the Institute of Metals have cooperated with many domestic units to publish the title of "A flexible carbon nanotube sen-memory" in "Advanced Materials" online. device) "research paper.
Researchers have proposed a carbon nanotube non-volatile memory based on an aluminum nanocrystal floating gate, with a high current switching ratio, a storage time of up to 10 years, and stable read and write operations, multiple discrete aluminum nanocrystals Floating gate devices have stable flexible performance. More importantly, the tunneling mechanism of the charge in the AlOx layer generated by oxidation changes from Fowler-Nordheim tunneling to direct tunneling, thereby realizing the sensing and detection of photoelectric signals; based on theoretical calculation analysis and experimental optimization Designed and prepared a 32 × 32 pixel non-volatile flexible ultraviolet array device. It realized the sensing and image storage of optical images for the first time, which laid the foundation for the development of new flexible light detection and storage devices.
Researchers use semiconducting carbon nanotube film as the channel material, and use the uniformly distributed aluminum nanocrystal / alumina integrated structure as the floating gate layer and tunneling layer to obtain high-performance flexible carbon nanotube floating gate memory. Under 0.4% bending strain, the current switching ratio between device read and write and erase is higher than 105, and the storage stability exceeds 108s. At the same time, the thinner aluminum oxide tunneling layer allows the carriers "trapped" in the aluminum nanocrystal floating gate in the erased state to return to the channel by direct tunneling when obtaining light energy higher than the aluminum work function Among them, the closed-state current is significantly improved, the direct conversion and transmission of photoelectric signals are completed, and a new multi-functional photoelectric sensing and storage system that combines image sensing and information storage is realized.