On March 20th, Suzhou Weiteline Technology Group Co., Ltd., in conjunction with the German WTI Group and Suzhou Youjing Optoelectronics Technology Co., Ltd., held the "first set of large-scale resistance method silicon carbide equipment innovation conference" at the Shanghai Dongjiao Hotel, and officially released the The company's large-size resistance method silicon carbide single crystal growth equipment and process. Representatives from St. Petersburg State University of Electronic Science and Technology, EZAN Laboratory of Russian Academy of Sciences, Novosibirsk State University, Russia's Skolkovo Innovation Center, Ukraine's Vibrostorm + and Armenia's HT Crystals attended the conference. There were also more than 100 industry experts, government leaders, investment agency representatives and media reporters from all over the country.
The release of large-size resistance method silicon carbide equipment shows that China has made breakthrough progress in large-size, high-quality silicon carbide crystal growth equipment and supporting growth technologies, and the technology has reached the international leading level, filling a gap in this field in China. This will break the long-term monopoly of silicon carbide single crystal growth equipment and substrates in developed western countries, and significantly reduce the cost of domestic silicon carbide equipment manufacturing and silicon carbide substrate production, and promote the third-generation semiconductor components in military, communications, and High-speed rail, new energy vehicles and other fields are more widely used.
Mr. Joseph Wilder, Chairman of Suzhou Weiteline Technology Group Co., Ltd.said that Weiteline has been focusing on the research and development of large-size silicon carbide crystal growth furnaces and process technology by resistance method. The team's close cooperation has now achieved phased results with significant innovation and advanced nature. This result is a model of international cooperation between China, Russia, and Germany. Wittline is willing to provide the best manufacturing for the semiconductor industry in China and the world. Equipment and substrate products.
Ms. Lisa Liu, President of Suzhou Weiteline Technology Group Co., Ltd. (Chairman of Suzhou Youjing Optoelectronics Technology Co., Ltd.) introduced that Weiteline's resistance method silicon carbide crystal growth furnace has simple process, high degree of automation, short growth time, and equipment performance Stable, in line with the development trend of large-size silicon carbide single crystal growth technology in the future; the dislocation density and microtube density of the grown crystal are low, the single crystal form is large, the effective thickness is large, and the effective production rate is high, which has filled the domestic 6-inch or larger The size of SiC crystal market is blank. In the future, we will work more closely with scientific research institutes in related fields such as Russia, Ukraine, Armenia, etc., to improve growth equipment and process technology, and help the rapid development of wide band gap semiconductor devices and downstream industries.
At the press conference, Mr. Tairov, who was far away from Russia, expressed his gratitude to Lisa Liu and her team through the live connection. As a recipient of the Russian Federation Government Award and a medal of honor for serving the motherland, he thanked Lisa Liu and her team. His efforts have given full recognition to the large-sized silicon carbide device he has invented in resistance method, and he wished the conference a complete success.
The six leaders at the scene jointly announced the official launch of the International Joint Laboratory and the on-site signing ceremony. The guests and media friends witnessed this important moment and pushed the atmosphere of the conference to a climax.
Dr. Hu Zhanggui, Director of the Crystal Growth and Materials Branch of the Chinese Silicate Society and Professor of Tianjin University of Technology believes: "Tairov of Russia is the internationally recognized originator of the industrial growth technology of silicon carbide single crystals. China started from the end of the last century and has now broken through 2 Inch and 4-inch inductive growth technologies still face problems such as low crystal yields and low effective utilization rates. As a result, the prices of domestic silicon carbide substrates have not been able to compete with similar foreign products, and they cannot meet the domestic market demand. The resistance method of silicon carbide crystal growth method has the characteristics of adjustable temperature field, high degree of automation of the growth process, and large effective utilization of the crystal. It is particularly suitable for the growth of large-size silicon carbide crystals larger than 6 inches. It is a very high potential for development. High-quality silicon carbide growth technology. It is recommended that in the process of industrialization, the existing experience of inductive growth in China is fully used, and the technical cooperation with domestic research institutes engaged in related fields be strengthened to form the capacity advantage of silicon carbide substrates as soon as possible. "
Expert in the field of sapphire crystals, Professor Zhang Mingfu of Harbin Institute of Technology pointed out: "Silicon carbide and sapphire are important substrate materials for semiconductor devices. Sapphire has been well used in LEDs, photovoltaic windows, and mobile phone screens; silicon carbide has a forbidden bandwidth , High breakdown voltage, high temperature resistance of the device, is the material of choice for high-brightness LEDs, high-power semiconductor device substrates; today I am very glad to witness the release of the large-scale resistance method silicon carbide crystal growth equipment of the Wetlan Company, the company ’s technology The team worked closely with the originator of silicon carbide growth technology and Russia's Tairov technology team to bring the domestic silicon carbide growth equipment and technology to the international advanced level in a short time. "Professor Zhang suggested that Viteline should be integrated with capital as soon as possible to industrialize the technology. To promote the progress of China ’s wide band gap semiconductor technology and the development of related industries.