The cost reduction and efficiency enhancement of SiC (silicon carbide) devices are closely related to the epitaxial process, and large-sized epitaxial wafers are beneficial for increasing production and reducing production costs.
On July 10, 2023, XMHT Electronic Materials Technology Corporation, a leading manufacturer of silicon carbide substrates in China, announced:
The company has completed the technological development of the 8-inch silicon carbide epitaxial process with independent intellectual property rights, officially possessing the production capacity of domestic 8-inch silicon carbide epitaxial wafers, and has recently signed multiple long-term contracts, including long-term contracts worth over 192 million US dollars (approximately 1.391 billion yuan) for 8-inch silicon carbide epitaxial wafers.
Currently, the quality of the 8-inch silicon carbide epitaxial wafers produced by XMHT has reached international advanced levels, with thickness unevenness less than 3% and concentration unevenness less than 6%, 2mm × The yield of 2mm tube core is over 98%.
The breakthrough in this technology marks that China has mastered the commercial 8-inch silicon carbide epitaxial growth technology, further promoting the localization process of silicon carbide epitaxial materials, and greatly enhancing China's international position in the field of silicon carbide epitaxial growth.
Increasing chip size is the best way to improve the competitiveness of semiconductor products. For example, 2mm × Through the same process, the output of an 8-inch silicon carbide epitaxial chip (device) with a 2mm size chip is 1.8 times that of a 6-inch chip and 4.3 times that of a 4-inch chip.
Therefore, XMHT has achieved commercial production of 8-inch silicon carbide epitaxial wafers, effectively reducing device production costs.