On August 15, 2022, China's leading silicon carbide substrate manufacturer: ZJJS Semiconductor Material Technology Corporation issued an announcement:
The company has successfully grown an 8-inch conductive SiC (silicon carbide) crystal, and the research and development of ZJJS's third-generation semiconductor material SiC has entered the 8-inch era since then.
New breakthrough in 8-inch SiC research and development
The 8-inch SiC crystal successfully developed this time, with a thickness of 25mm and a diameter of 214mm, is a major breakthrough in large size. This time, it not only successfully solved the difficult problems such as uneven temperature field, crystal cracking, and gas-phase raw material distribution during the growth of 8-inch SiC crystal, but also solved the problem that the substrate accounts for too much in the cost of SiC devices, which is a large-scale SiC substrate. Lay the foundation for a wide range of applications.
SiC has the characteristics of "high hardness, high brittleness, and low fracture toughness", and cracking and other problems are prone to occur during the crystal growth process. ZJJS can successfully develop 8-inch SiC crystal, which is a great breakthrough. "
SiC devices have the advantages of high temperature resistance, high voltage resistance, good high frequency characteristics, high conversion efficiency, small size and light weight. Among them, conductive SiC is generally used for power electronic devices, and is widely used in new energy vehicles, rail transit, photovoltaics, etc. , 5G communication and other fields.
China is currently in the stage of mass production of 6-inch SiC materials.
China's leading conductive silicon carbide substrate manufacturer SDTY recently disclosed that from 2023 to 2025, SDTY will sell 6-inch conductive silicon carbide substrate products, with a total amount of 1.393 billion yuan. This means that China's conductive SiC substrate industry has entered the fast lane.
ZJJS's 6-inch SiC products are also in rapid mass production. In March this year, the company started the construction of the first phase of the production capacity of conductive and insulating SiC substrates with an annual output of 400,000 pieces of 6 inches or more in Ningxia. In addition, it was revealed that they have obtained orders for intentional SiC substrates, and will give priority to providing customers with a total of no less than 230,000 SiC substrates within three years.