High thermal conductivity silicon nitride ceramic substrate has the characteristics of high thermal conductivity, high mechanical strength, high electrical insulation, good thermal shock resistance and low expansion. Its comprehensive performance is better than the commonly used aluminum nitride and alumina substrates. Silicon nitride ceramic substrates have a wide range of applications in high-end high-power electric and electronic devices, and can be used in high-speed rail, new energy vehicles, LED lighting, wind power generation and aerospace industries. At present, the relative level of domestic technology has led to the domestic market being monopolized by countries such as Europe, the United States, and Japan.
After a long period of research and development, the research team of GSYS of Ceramics has made important progress in the field of high-performance silicon nitride substrate materials.
The research team broke through key technologies for the development of large-size, high-thermal-conductivity silicon nitride ceramic substrates through the precise control and optimization of various components such as material composition design, microstructure control, molding, and sintering processes. Silicon substrate.
High thermal conductivity silicon nitride substrate
At present, the average thermal conductivity of silicon nitride substrate is 95W / (m · k), the optimal temperature can reach 120W / (m · k), the size can reach 120 × 120mm2, the thickness is 0.32mm, and the external dimensions can be adjusted according to actual needs. At the same time, the copper coating of the silicon nitride substrate was realized, and the process route for mass production of the high thermal conductivity silicon nitride substrate was opened.
Micromorphology of High-Conductivity Silicon Nitride Materials for Reaction Sintering and Post-Sintering
Copper-clad high thermal conductivity silicon nitride substrate
At present, the thermal conductivity of commercial silicon nitride ceramic substrates is generally 80-90W / (m · k) (such as the thermal conductivity of Toshiba's silicon nitride substrate (TSN-90) is 90W / (m · k)). Therefore, the performance indicators of this product can fully meet the needs of commercialization. The successful research of high thermal conductivity silicon nitride ceramic substrates will provide strong support for the production and research and development of domestic high-power semiconductor devices, especially IGBTs (Insulated Gate Bipolar Transistors), which are expected to have strong economic and social benefits.