Silicon carbide (SiC) is the third-generation semiconductor material, which has the advantages of large forbidden band width, high critical breakdown field strength, and high thermal conductivity. It is an ideal material for making high-voltage, high-power semiconductor devices. . Because the Mohs hardness of SiC is 9.2, second only to diamond (its Mohs hardness is 10), the processing is very difficult. When the diameter of the crystal reaches 2 inches, the conventional inner circle cutting machine cannot work effectively. Cutting silicon carbide with diamond wire is a direction of product application expansion. Cutting silicon carbide with diamond wire will have certain advantages.
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