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EnergyTrend invests in Transphorm to deepen GaN layout

On November 10, 2021, EnergyTrend announced that it would invest US$15 million in Transphorm, a US company, to acquire 5.84% of the equity. It hopes to deepen its layout in the field of gallium nitride (GaN) through a strategic alliance with Transphorm.

EnergyTrend acquired approximately 3 million common shares of Transphorm at a price of US$5 per share, holding approximately 5.84% of the shares, and a total amount of US$15 million, including US$5 million invested in August.

EnergyTrend said that the strategic alliance between the two parties will help Transphorm expand the supply chain of GaN epitaxial wafers. EnergyTrend’s semiconductor silicon wafer fab Global Wafer will become a partner with Transphorm to supply Transphorm’s GaN epitaxy chips to help Transphorm increase its production capacity. At the same time, EnergyTrend will also become a distributor of Transphorm's specific GaN epitaxial wafers and power products to promote the sales of Transphorm GaN products.

It is reported that the GaN power device and radio frequency market has billions of dollars in business opportunities, including fast charging, inverters, renewable energy, electric vehicles, industrial power and many other rapidly growing fields.

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