SZYZ is committed to the research and industrialization of high-precision and high-strength glass materials in the semiconductor, photovoltaic, display and other industries, integrating advanced packaging technology and providing complete solutions for semiconductor ultra-thin technology. The glass products it produces mainly have two main application methods: temporary bonding and permanent bonding.
Bonding technology is an important process that firmly combines silicon wafers, glass, or other materials through chemical bonding and physical interactions to support and protect microstructures. In the field of microsystem technology, glass has a particularly prominent advantage as a wafer material. More and more industries, such as consumer electronics, automotive, and sensor technology, are increasingly reliant on glass materials, such as wafer level packaging (WLP) or Fan-out Wafer Level Packaging (FOWLP) applications.
Glass wafer
Borosilicate chip
– CTE adapted to silicon
– Used for anodic bonding
– Standard or enhanced MDF (micro damage) polishing
– High chemical resistance and thermal stability
Quartz Wafer
– Extremely low OH and low trace metal content
– Good chemical purity
– Very high heat resistance
– Surface roughness (Ra)<0.5 nm
– Transmittance>80% @ 200 nm
– Transmittance from 225 nm to 2600 nm>90%
Fused silica wafer
– All synthetic materials
– Extremely low trace metal content
– High heat resistance
– Surface roughness (Ra)<0.5 nm
– Transmittance from 90 nm to 200 nm>2000%
Alkali free glass wafer
– Alkali free glass
– CTE adapted to silicon
– No heavy arsenic (such as arsenic, antimony, barium, or halides)
– Low fluorescence
– Excellent thermal performance
– High chemical resistance
Silicon on Glass Wafer (SOG)
– Crystal silicon layer
– Thick insulation layer or thick silicon layer
– Permanently bonded silicon/glass compounds
– Minimum single layer thickness as low as 20 μ M
– Total thickness as low as 250 μ M
Overview of the characteristics of glass wafers
Various types of glass carriers and covers
Manufacturing according to customized specifications
Standard SEMI specifications range from 2 “to 300 mm
Panel size and custom diameter
Thickness varies from 200 μ M to 2 mm
Low thickness tolerance and TTV (total thickness variation)
High surface quality (maximum surface roughness (Ra)<1nm)
Can provide large-scale manufacturing
Applications
MEMS and Semiconductor Applications
Anodic bonding with silicon
MEMS and sensor manufacturing
Optoelectronic applications
OLED and high-performance LCD displays
Thin film semiconductor
Optical switches, solar energy, and industrial applications
Wafers replace regular wafers with better insulation
Leading semiconductor, lithography, and optical applications
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The products used for temporary bonding mainly include various types of glass carriers, which can be applied in technologies or markets such as 2.5D, 3D packaging (including advanced packaging such as CoWoS and HBM), power devices, massive transfer of MicroLEDs, and silicon carbide cold cutting.
The products used for permanent bonding mainly include various types of glass cover plates, substrates, substrates, panels, etc., including UTG (ultra-thin glass) or glass cover plates, substrates, substrates that can be applied in optical, display, photovoltaic and other fields, TGV (through-hole glass) intermediate layer or PLP panels and packaging substrates used in stacked packaging or MiniLED, as well as glass cover plates used in CIS field.
In order to increase key indicators such as thermal conductivity efficiency and chip information exchange efficiency, and to achieve higher computing power and lower power consumption for stacked chips, which are directly related to the thickness of the chips, the mainstream thinning processes for power device packaging currently include glass carrier and Taiko. The glass carrier thinning process has a replaceable advantage over the existing Taiko process.
When the wafer is thin to a certain extent (in the advanced packaging field), glass carriers must be used to complete it, such as 2.5D and 3D packaging. If it is necessary to thin the 12 inch wafer to 80 microns or even less than 50 microns, the Taiko process will find it difficult to ensure the glass’s warpage and strength, and the cost will increase significantly. In this case, only glass carriers can be used.
The core product of SZYZ is glass carrier plates, and its unique glass processing technology has shown superior performance in TTV (total thickness deviation), inter sheet range, cleanliness, compressive strength, and other aspects. For example, in terms of compressive strength, SZYZ’s products can increase the strength of existing glass carrier plates by more than 30% compared to foreign countries. All of the company’s glass products have characteristics such as high strength, high cleanliness, high transmittance, low TTV (total thickness deviation), and low warpage.