Ideal heat dissipation and packaging materials for a new generation of large-scale integrated circuits, semiconductor module circuits and high-power devices
Aluminum nitride has become an important precision ceramic material due to its high thermal conductivity, high insulation resistivity, superior mechanical strength and thermal shock resistance. High-performance aluminum nitride ceramics are ideal heat dissipation and packaging materials for a new generation of large-scale integrated circuits, semiconductor module circuits and high-power devices.
Material introduction
Aluminum nitride (AlN) is a covalent crystal with a hexagonal wurtzite structure. It is an important ceramic material with high thermal conductivity and low thermal expansion coefficient. Its theoretical thermal conductivity is 320W/(m), and its specific oxidation Aluminum is 5-8 times higher, so it has good thermal shock resistance and can withstand extreme heat at 2200°C. In addition, it is not corroded by molten aluminum, other molten metals and gallium arsenide, and has excellent corrosion resistance.
High-performance aluminum nitride ceramics made of aluminum nitride powder have excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxic, and excellent overall performance such as thermal expansion coefficient matching silicon It is very suitable for semiconductor substrates and structural packaging materials, and is considered to be an ideal material for a new generation of semiconductor substrates and electronic device packaging.
Application field
High-power semiconductor devices, integrated circuits, electronic packaging, thermal shock resistance and heat exchange materials, microwave attenuation…