On September 5, HBTG Semiconductor Materials Technology Corporation's newly-built high-purity semi-insulating silicon carbide substrate production line officially began commercial production, with an annual production capacity of 100,000 pieces and a size of 4-6 inches.
The project has 600 single crystal growth furnaces, more than 200 multi-wire cutting machines, grinding machines and other processing equipment, with a total investment of about 950 million yuan.
In the second phase of the project, HBTG will build 2,000 silicon carbide crystal growth furnace growth bases and an annual production of 600,000 silicon carbide single crystal substrate processing bases. The planned total investment is 4 billion yuan. It is expected to achieve full production operations by the end of 2025.
HBTG is mainly engaged in the R&D and production of silicon carbide substrates of third-generation semiconductor materials. The company's main products include 4-inch and 6-inch conductive, semi-insulating silicon carbide substrates, of which 4-inch substrates have reached the world's advanced level. At present, the company has built a complete silicon carbide substrate production line and is a leading silicon carbide substrate technology company in China.