On February 28, the silicon carbide material industry base of ZGDK held a commissioning ceremony.
ZGDK Electronic Information Technology Innovation Industrial Park project includes "one center, three bases". The "three bases" are China Silicon Carbide Material Industry Base, China Electronic Equipment Intelligent Manufacturing Industry Base, and China Energy Industry Base.
Among them, the ZGDK Silicon Carbide Material Industrial Base that has been put into operation this time will be the largest domestic silicon carbide (SiC) material supply base. The first phase of the Silicon Carbide Industrial Base started construction on April 1, 2019, and was capped on September 26 of the same year. According to the news of the Shanxi Comprehensive Reform Demonstration Area, the construction area of the first phase project It can accommodate 600 silicon carbide single crystal production furnaces and the processing and inspection capabilities of 180,000 N-type wafers, which can form a capacity of 75,000 silicon carbide wafers, which will completely solve the situation of blockade of China's silicon carbide abroad and achieve full autonomy. After the project is put into production, it will become the top three silicon carbide production enterprises in China and the top ten in the world, with an annual output value of 1 billion yuan.
Due to the large band gap width, high critical breakdown field strength, high electron mobility, and high thermal conductivity, silicon carbide materials have important application value and broad application prospects in many strategic industries.
Since 2007, ZGDK has begun to develop a silicon carbide single crystal substrate material development plan. Relying on its own technical advantages in the field of electronic special equipment research and development, it has concentrated on the development of silicon carbide single crystal growth furnaces. At present, he has comprehensively mastered the preparation process of high-purity silicon carbide powder and the 4-inch high-purity semi-insulating silicon carbide single crystal substrate. Material development line, the earliest domestic production of high-purity silicon carbide materials, high-purity semi-insulating wafer mass production.