In the field of silicon carbide single crystal growth, technology development units use physical vapor transfer (PVT) to grow silicon carbide (SiC) single crystals, use design platform computer simulation software for temperature field design, and verify and optimize the actual single crystal growth; establish Low defect density and low impurity controlled growth model, continuously improve the crystal growth process parameters, and stable growth of high quality silicon carbide (SiC) single crystals with extremely low defect density in batches. At the same time, the technology development unit uses multi-wire cutting technology to slice silicon carbide (SiC) single crystals, uses optimized Del physical grinding technology to grind, and uses a unique chemical mechanical polishing liquid cleaning solution to precisely polish the wafers, producing stable and high quality in batches. Silicon carbide (SiC) single crystal substrate. This technology uses a self-developed silicon carbide single crystal growth furnace, which overcomes a series of core key technologies such as single crystal growth, defect control, and substrate processing. It stably produces high-quality silicon carbide semiconductor single crystal substrate materials in batches, and its product performance reaches international standards. Advanced and domestic leading level.
Scope of application: It is widely used in 5G communication, aerospace, rail transportation, new energy vehicles, charging piles, power servers, inverter appliances, and solar inverters, etc., to achieve high efficiency, miniaturization and light weight of power electronic systems.