HRL Labs reports on the progress of the GaN project, which is being carried out in collaboration with the U.S. Defense Advanced Research Projects Agency (DARPA) to promote cutting-edge millimeter-wave (mm-wave) T3 gallium nitride (GaN) Development of related R & D technology and manufacturing level of electronic products.
The HRL laboratory is a research and development laboratory owned by Boeing and General Motors. It is responsible for the research of sensors and research materials, information and systems science applied electromagnetics, integrated circuits and microelectronics. Laboratory engineers said that integrated circuits (ICs) developed after applying GaN to silicon carbide substrate wafers can meet the best combined efficiency and output power, and such ICs are also applicable to radio frequency and mm-wave semiconductor technology; There is no doubt that such GaN devices and monolithic microwave integrated circuits (MMICs) will become the key to promoting the development of next-generation radar, electronic warfare systems and communication systems.
At the request of both HRL Labs and DARPA, engineers from HRL Sensors and Electronics Labs held seminars and invited circuit designers from academic institutions and government laboratories to discuss the pros and cons of HRL's T3 GaN technology process design components. .
The sponsor of the seminar was Dr. Danny Hoffa of HRL. "In order to promote the maturity of T3 GaN technology, DARPA has provided us with financial guarantees. Today we only need to take full advantage of technological research and development. At the same time, we are very I am glad that GaN technology can attract the interest of partners from all walks of life and join with enthusiasm. As part of our project team, designers will participate in various design work of MMICs based on multi-project wafers. "
HRL mm-wave GaN R & D project leader Dr. Herlot said, "So far, two factors have prevented GaN electronics from entering the military market, namely long production cycles and immature technology development. This project will shorten our The gap between the designed product and the world's fastest GaN product expected. With the support of DARPA, we are fully capable of shortening the production cycle, enabling assembly line production, and meeting defense performance standards. In short, what the government needs is An industrial supplier with mature and advanced GaN technology, and our microfabrication technology laboratory has an excellent production environment, we are committed to becoming one of the main suppliers of high-performance mm-wave GaN components. "