On August 26, 2019, Huawei invested RMB 700 million to acquire a 10% stake in China's leading silicon carbide semiconductor substrate material manufacturer: SDTY Advanced Materials Technology Co., Ltd., and became its second largest shareholder.
The SDTY favored by Huawei this time is the leading enterprise in the field of wide-bandgap silicon carbide semiconductor materials in China. It is focusing on the development and production of wide-bandgap silicon carbide semiconductor single crystal substrate materials. SDTY has mastered the core key technology of silicon carbide semiconductor material industrialization, and is the fourth enterprise in the world that can supply 4H-SiC (silicon carbide) substrate products in batches. Among them, only high-purity semi-insulating substrates in the world can be batched by SDTY and a foreign company. Stable supply.
In 2016, SDTY "wide band gap power semiconductor industry chain project" was included by the National Development and Reform Commission in the "National Integrated Circuit "13th Five-Year Plan" Major Productivity Layout" project.
In early 2019, SDTY Advanced Materials Technology Co., Ltd.'s high-quality 4H-SiC single crystal substrate material R&D and industrialization project (annual output of 30,000 6-inch silicon carbide single crystal substrates) was put into production.
The third-generation semiconductor represented by SiC silicon carbide has a forbidden bandwidth, high thermal conductivity, high breakdown field strength, high saturation electron drift rate, stable chemical properties, high hardness, wear resistance, high bond and high energy, and radiation resistance It can be widely used in the manufacture of high-temperature, high-frequency, high-power, radiation-resistant, high-power and high-density integrated electronic devices. It can be widely used in high-power high-frequency electronic devices, semiconductor light-emitting diodes (LEDs), and such as 5G The fields of microwave communication such as telecommunications and logistics networks have been included in the "Outline of National Medium and Long-Term Scientific and Technical Development Planning."