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Infineon & Bosch Silicon Carbide Wafer Supplier Releases Latest Technology for 8-inch Silicon Carbide Substrates Hay:I01SDTY

On June 29, 2023, SEMICON China opened in Shanghai

SDTY Silicon Carbide Material Technology Corporation, a leading manufacturer of silicon carbide substrates in China, presented the latest technology of 8-inch silicon carbide substrates at the Semicon China exhibition and received high attention.

At the power and compound Semiconductor industry international forum held at the same time, CTO Dr. Gao of the company disclosed the latest progress of the SDTY silicon carbide wafer 8-inch liquid phase method technology.

SDTY currently focuses on 6-inch conductive silicon carbide substrates to meet the needs of global customers.

Progress in Liquid Phase Method for 8-inch Silicon Carbide Wafers

In terms of technology and research and development, the company has consistently maintained a high investment in technology research and development, actively laying out forward-looking technologies. As a promising new technology for the preparation of silicon carbide single crystals, the liquid phase method has attracted much attention.

Obtaining uniform and high-quality crystals through liquid phase method requires controlling the temperature and flow field, which poses a high technical difficulty. SDTY has been deployed in this technology for many years.

Recently, the company adopted a liquid phase method to prepare 8-inch crystals with low defects. Through thermal field, solution design, and process innovation, it has overcome the challenges of high-quality growth interface control and defect control for silicon carbide single crystals, which is still the first in the industry.

In addition to product size, in terms of efficient preparation of large-sized single crystals, the thickness of crystals prepared using the company's latest technology has exceeded 60mm, which is of great significance for improving production capacity. This technology is also one of the key technological directions of the company's layout.

The development of SiC semiconductor applications has entered a fast lane, especially in the high-voltage and high-power fields, where advantages are more prominent and development is accelerating. New application scenarios are constantly emerging, but the most critical substrate preparation process has a high technical threshold and a long expansion cycle, exacerbating the supply and demand gap.

SDTY continues to increase research and development and technological improvement in multiple dimensions such as product size, crystal thickness, and substrate quality, always maintaining a leading position and leading the industry's development.

SDTY is a leading enterprise in China that simultaneously produces conductive silicon carbide substrates and semi insulating silicon carbide substrates on a large scale. In the field of semi insulating silicon carbide substrates, as of 2022, the company's market share has remained in the top three globally for four consecutive years.

On the same day, SDTY and Infineon jointly announced that they had signed a new wafer and ingot supply agreement. According to this agreement, SDTY will supply Infineon with high-quality and competitive 6-inch silicon carbide substrates and crystal rods for manufacturing silicon carbide semiconductors. The first phase will focus on 6-inch silicon carbide materials, but SDTY will also assist Infineon in transitioning to 8-inch silicon carbide wafers.

The supply of SDTY is expected to account for a double-digit share of Infineon's long-term demand.

It is worth mentioning that Bosch Group has also signed a long-term strategic cooperation agreement with Tianyue Advanced to lock in the demand for silicon carbide substrates, a key material in chip manufacturing.

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