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Infineon signs a strategic procurement agreement with Chinese silicon carbide substrate supplier Hay:I01SDTY

Infineon has signed a new silicon carbide wafer and ingot supply agreement with SDTY, further promoting the diversification of its silicon carbide supplier system

On May 3, 2023, Infineon signed a new silicon carbide wafer and ingot supply agreement with China's leading silicon carbide supplier, SDTY Advanced Materials Technology Corporation.

This agreement not only allows Infineon to diversify its silicon carbide (SiC) material supplier system, but also ensures that Infineon obtains more competitive supply of silicon carbide materials.

According to this agreement, SDTY will supply high-quality and competitive 150mm silicon carbide wafers and ingots for manufacturing silicon carbide semiconductors to German semiconductor manufacturer Infineon, with supply expected to account for Infineon's double-digit share of long-term demand.

According to the agreement, the first phase will focus on the supply of 150mm silicon carbide materials, but SDTY will also assist Infineon in transitioning to 200mm diameter silicon carbide wafers. This cooperation will help ensure the stability of the entire supply chain, especially to meet the growing demand for silicon carbide semiconductor products in the Chinese market in areas such as automotive, solar, and electric vehicle charging applications and energy storage systems, and will promote the rapid development of the emerging semiconductor material silicon carbide.

Ms. Angelique van der Burg, The CPO of Infineon Technologies, stated: In order to meet the growing demand for silicon carbide, Infineon is significantly increasing the production capacity of its production bases in Malaysia and Austria. Based on the interests of our customers, we are implementing a multi supplier and multinational procurement strategy to increase our supply chain flexibility, and are adding new competitive and high-quality sources of goods that meet the highest market standards globally

The CEO of SDTY: "The company's silicon carbide substrate products are widely used in the field of silicon carbide power semiconductors. We are delighted to have more cooperation with the global power semiconductor market leader and our customer Infineon.

SDTY will continue to expand its silicon carbide substrate production capacity and provide more value to global customers. Infineon, as a leader in the field of power semiconductors, is our excellent strategic customer and we will attach great importance to it. At the same time, we also look forward to working with Infineon to promote the development of the silicon carbide industry, promote the global digitization, low-carbon process, and sustainable development

Infineon is focusing on increasing its silicon carbide production capacity to achieve its goal of occupying 30% of the global market share by 2030. It is expected that Infineon's silicon carbide production capacity will increase tenfold by 2027. Infineon's new factory in Curin, Malaysia is scheduled to start production in 2024, which will supplement the production capacity of the Austrian factory in Filach. So far, Infineon has provided silicon carbide semiconductor products to over 3600 automotive and industrial customers worldwide.

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