Munich, Germany, November 13, 2018—Infineon Technologies AG (FSE code: IFX / OTCQX code: IFNNY) brings CoolGaN ™ 600 V enhanced HEMT and gallium nitride switch tube with gallium nitride (GaN) solution Dedicated driver IC (GaN EiceDRIVER ™ IC). Infineon has demonstrated the superiority of its products: they have higher power density, enabling a more compact and lightweight design, which reduces the overall system and operating costs, and reduces capital expenditures. With the introduction of CoolGaN 600 V enhanced HEMT and GaN EiceDRIVER gate driver ICs, Infineon is currently the only company on the market to offer materials covering silicon (Si), silicon carbide (SiC), and gallium nitride (GaN). Full range of power products company.
CoolGaN 600 V enhanced HEMT:
The newly released CoolGaN 600 V enhanced HEMT uses a reliable normally closed concept that is specifically optimized for fast turn-on and turn-off. They enable high energy efficiency and high power density in switched-mode power supplies (SMPS), and their figure of merit (FOM) is second to none in all 600 V devices on the market today. CoolGaN switches have extremely low gate charges and have very little output capacitance. They can provide excellent dynamic performance in reverse conduction state, which can significantly increase the operating frequency, thereby reducing the overall size of passive components and increasing power density. Infineon's CoolGaN 600 V enhanced HEMT is extremely energy efficient in power factor correction (PFC) converters (2.5 kW PFC efficiency> 99.3%). A power density of 160 W / in3 can be achieved at the same energy efficiency (3.6 kW LLC energy efficiency> 98%). In resonant topologies, CoolGaN linear output capacitors reduce dead time to one-eighth to one-tenth.
Looking at the market, CoolGaN has industry-leading reliability. In the process of quality control, we not only conduct a comprehensive test of the device itself, but also perform a comprehensive test of its performance in the application environment. This ensures that CoolGaN switches meet or exceed the highest quality standards.
CoolGaN 600 V enhanced HEMTs are available in 70 mΩ and 190 mΩ SMD packages, ensuring excellent thermal performance and low parasitics. By providing a full range of SMD packaging products, Infineon aims to support high-frequency applications such as enterprise-class ultra-large-scale data center servers, communication rectifiers, adapters, chargers, SMPS and wireless charging facilities.
GaN EiceDRIVER IC:
Infineon ’s new GaN driver ICs, EiceDRIVER ICs-1EDF5673K, 1EDF5673F and 1EDS5663H-are perfect partners for CoolGaN enhanced HEMTs. They have been specifically developed to ensure that CoolGaN switches achieve robust and efficient operation, while minimizing the amount of engineer R & D workload and speeding time to market.
Unlike traditional power MOSFET gate drive ICs, this gate drive IC tailored for Infineon CoolGaN provides a negative output voltage to quickly turn off GaN switches. The GaN EiceDRIVER IC keeps the gate voltage stable to zero for the entire duration that the switch should be off. This protects the gallium nitride switch from noise-caused erroneous switching, even the first pulse, which is essential for SMPS to achieve robust operation. GaN gate driver ICs achieve constant GaN HEMT switching slew rates and are virtually unaffected by duty cycles or switching speeds. This ensures robust operation and high energy efficiency, greatly reducing the development cycle. It integrates galvanic isolation for robust operation in hard- and soft-switching applications. It also provides protection between the SMPS primary and secondary sides, and provides protection between the power and logic stages as needed.
GaN EiceDRIVER 1EDF5673K is available in a 13-lead LGA 5×5 mm package, 1EDF5673F is available in a 16-lead DSO 150 mil package, and 1EDS5663H is available in a 16-lead DSO 300 mil package.