Recently, the II-VI company has made another new move-its largest technology research and development center was completed in Shanghai, and it has taken another step towards the layout of the new energy vehicle market in China.
II-VI is accelerating the layout of silicon carbide. Previously, it added a silicon carbide production line in Fuzhou and proposed to increase production capacity by 5-10 times. It also acquired 3 silicon carbide companies and introduced 8-inch silicon carbide substrates.
Other international giants also act frequently. According to the "three-generation and half-wind direction", Cree, ROHM, STMicroelectronics, Showa Denko, Bosch and X-Fab have invested more than 20.4 billion yuan in total to expand production capacity. Among them, Cree promotes expansion. 30 times the production capacity of silicon carbide, Showa Denko expanded production 6 times (pulled to the end).
On April 23, II-VI held the inauguration ceremony of the II-VI Technology R&D Center in Shanghai. The center is II-VI's largest technology and R&D center, with nearly 600 employees.
According to reports, the center was established to serve the world's largest electric vehicle market. For this reason, II-VI has continuously increased its efforts to expand its silicon carbide manufacturing business to China.
In July 2020, II-VI invested about 100 million yuan to purchase third-generation semiconductor silicon carbide project equipment. On April 15, the II-VI Fuzhou Asia Regional Headquarters formally established a post-processing line for SiC conductive substrates. II-VI said that in the next five years, the production capacity of SiC substrates will be increased by 5 to 10 times, including mass production of substrates with a diameter of 200 mm (8 inches).
In July 2015, II-VI demonstrated a 200mm (8-inch) 4HN SiC substrate; in January 2019, II-VI announced the use of the REACTION project to produce 200mm silicon carbide substrates, the world’s first 200mm silicon carbide substrate. Silicon carbide pilot line; in October 2019, II-VI launched a 200 mm diameter semi-insulating silicon carbide prototype substrate for RF power amplifiers.
In terms of acquisitions, II-VI has successively acquired 4 companies.
At the end of 2001, II-VI acquired Litton-Airtron's SiC R&D department.
In August 2017, II-VI acquired Kaiam Laser Limited, a British 6-inch wafer manufacturing plant, for US$80 million (520 million yuan);
In August 2020, II-VI announced the acquisition of Ascatron AB, a SiC epitaxial wafer and device company, and INNOViON Corporation, an ion implantation service provider.
Cree, ROHM, STMicroelectronics, Showa… invested more than 20.4 billion to expand silicon carbide production capacity
Not only II-VI, many silicon carbide foreign companies have been expanding production in recent years.
Cree invests 6.5 billion to expand production capacity by 30 times
On May 7, 2019, Cree announced that it will invest up to 1 billion US dollars (about 6.5 billion yuan) to expand silicon carbide production capacity. The goal is to increase SiC wafer manufacturing capacity by up to 30 times and increase SiC material production by 30 To meet the expected market growth in 2024.
Among them, US$450 million is used for North Fab, US$450 million is used for the material super factory, and US$100 million is used for other investments required by the business.
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