At present, the world's first echelon of precursor materials is Germany's Merck and France Air Liquide. China's leading semiconductor material technology giant JSYK Electronic Materials Technology Group has continuously acquired international electronic material technology companies + its own technological innovation accumulation The gap between its semiconductor material technology level and international giants is constantly shortening, and it is expected to be comparable to international giants. At the same time, only three companies in the world can mass produce SOD products under JSYK.
JSYK successfully entered the fields of semiconductor packaging materials, electronic special gas, IC materials and so on through mergers and acquisitions.
In 2016, JSYK acquired 100% of ZJHF Electronic Materials Technology and entered the field of silicon micro-powder manufacturing. In 2017, it acquired 90% of CDKM Special Gas Co., Ltd. and involved in special electronic gases; in the same year, it acquired JSXK Semiconductor New Materials Co., Ltd., and JSXK`s subsidiary Korea Electronic Materials Technology Co., Ltd. is an important semiconductor material supplier, semiconductor precursor and SOD product filling Domestic blanks.
JSYK acquired part of the operating assets of LG Chemical's Color Photoresist Division in 2019.
Focus on the layout of key materials for chip manufacturing, only three companies in the world can produce
In the chip manufacturing industry, SOD and semiconductor precursors are important materials for chip manufacturing. The main products of the Korean Electronic Materials Technology Company acquired by JSYK are SOD and semiconductor precursors, which are used in the manufacturing of semiconductor integrated circuit storage and logic chips. Among them, thin film deposition and photolithography are the main application areas of Korean Electronic Materials Technology. It is also the core technology process link of semiconductor integrated circuit chip manufacturing.
The coating material of the silicon film preparation process of SOD products is mainly used in the STI technology of the DRAM and NAND manufacturing process to fill the trenches between the microelectronic circuits. It can make the isolation area under the premise that the device performance remains unchanged. It becomes smaller, and it can also play the role of inter-chip insulation in the DRAM chip, realize the technical process of high-density storage circuit, and improve the circuit efficiency.
Korea Electronic Material Technology Corporation has been producing and selling SOD products since 2009. After years of continuous research and development, it has broken the German monopoly of Merck and became one of the only three semiconductor material manufacturers in the world to achieve stable mass production and supply of semiconductor memory chip SOD products.
JSYK precursor products are mainly used in the thin film deposition process of the semiconductor integrated circuit manufacturing process. The formation of a thin film with specific electrical properties on the surface of the integrated circuit wafer through chemical reactions and other methods is critical to the quality of the film. The main precursor products of Korea Electronic Materials Technology Corporation are divided into high dielectric constant (High-K) precursor products, silicon oxide and silicon nitride precursor products, and metal and metal nitride precursor products.
The High-K precursor products of Korea Electronic Materials Technology Company are mainly hafnium-based (TEMAH), zirconium-based (ZOA203, TEMAZ) and aluminum-based compounds (TMA). After being sold to downstream customers, downstream manufacturers use precursor products to generate The corresponding oxide film covers the surface of the substrate of the integrated circuit chip to form the capacitive medium or the gate dielectric in the integrated circuit. Its high dielectric constant is beneficial to the improvement of chip performance.
Since the 65nm era, leakage has been an important factor in reducing the yield of processors, hindering performance improvement and reducing power consumption. With Intel 45nm taking the lead in adopting the High-K process, the problem of device shrinkage and leakage can be well solved. Compared with the traditional process, the High-K metal gate dielectric can reduce the leakage by about 10 times, so that the power consumption can also be well controlled, and the theoretical performance can be increased by about 20%.
The silicon oxide and silicon nitride precursor products of Korea Electronic Materials Technology Company are mainly used to assist the realization of lithography technology in semiconductor storage and logic chip manufacturing. At the same time, HCDS and ZOA130 can also form gate sidewall silicon oxide or Silicon nitride is used to protect the control gate in the integrated circuit, thereby prolonging the service life of the integrated circuit.
After Korea Electronic Materials Technology's silicon oxide and silicon nitride precursor products are sold to downstream customers, downstream manufacturers use the above products to generate corresponding silicon oxide or silicon nitride films to cover all layers of integrated circuit chips.