SCHT Electronic Material Technology Group:
In the field of third-generation semiconductor (GaN), it has internationally leading and domestic first-class technology; the global GaN chip patented technology belongs to the first-class echelon. The company has a total of 249 patents, of which more than half are invention patents.
The company has broken through a number of key processes for GaN-on-silicon, and has successfully developed GaN-on-silicon technology and mass production.
XMSA Optoelectronics Technology Group
The company's power electronics business has launched high reliability, high power density silicon carbide power diodes and MOSFETs and GaN-on-silicon power devices. The products are mainly used in new energy vehicles, charging piles, photovoltaic inverters and other power supply markets; XMSA is in In the field of microwave radio frequency, specialized and large-scale production lines for 4-inch and 6-inch compound wafers have been built. In the field of electronic circuits, SiC power diodes and GaN-on-silicon power devices with high reliability and high power density have been introduced.
XMQZ Optoelectronics Technology Group: China's largest manufacturer of epitaxial wafers and chips of gallium arsenide.
BJYY New Materials Technology Group, China's strongest and largest supplier of gallium arsenide.
SHSW Electronic Technology Company: Continue to lay out the third generation of semiconductor core materials, and its holding subsidiary successfully developed 8-inch GaN-on-Si epitaxial wafers.
HBTJ Semiconductor Technology Group: a leader in the power semiconductor market segment, developing the third-generation wide-bandgap semiconductor materials and device technologies represented by Sic (silicon carbide) and GaN (gallium nitride).
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