NXP Semiconductors (NXP) announced the official opening of its 6-inch RF Gallium Nitride (GaN) fab in Chandler, Arizona, USA, which is the most advanced fab in the United States focusing on 5G RF power amplifiers.
NXP said that this new gallium nitride fab has passed certification, and the first batch of products will continue to be launched on the market, and it is expected to reach full capacity by the end of 2020.
NXP pointed out that this new factory combines the expertise and mass production technology of NXP's RF power leader to represent innovation and help support the expansion of 5G base stations and advanced communications infrastructure in the industrial, aerospace and defense markets.
Kurt Sievers, President and CEO of NXP Semiconductors, said in his speech that today symbolizes an important milestone for NXP. By establishing this advanced plant in Arizona and attracting key talents, NXP can focus more on the development of gallium nitride technology as part of promoting the next-generation 5G base station infrastructure.
With the development of 5G, the power density required by each antenna in the radio frequency solution has increased exponentially, but it is still necessary to maintain the same chassis size and reduce power consumption. Gallium nitride power transistors have become the new gold standard for meeting these stringent requirements and can significantly increase power density and efficiency.
At the same time, Paul Hart, executive vice president and general manager of the radio power business unit of NXP Semiconductors, said that the NXP team has always been committed to building the world's most advanced RF GaN wafer fab, which can be expanded to 6G or even higher.