Researcher of the State Key Laboratory of Catalysis Basics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Fu Qiang team worked with TSMC Lain-Jong Li team, Taiwan Jiaotong University Wen-Hao Chang team, Rice University BI Yakobson team, Peking University professor Zhang Yanfeng team, A single crystal hexagonal boron nitride (hBN) single-layer thin film was successfully epitaxially grown on a 2-inch wafer substrate.
Hexagonal boron nitride is an important class of two-dimensional semiconductor layered materials. How to achieve the controlled growth of single crystal hexagonal boron nitride thin films on wafers is a key challenge for the future application of hexagonal boron nitride in integrated circuits. To this end, the researchers grew a grain-free single-crystal copper film with a surface orientation of (111) on a sapphire substrate as a substrate to further prepare a completely ordered hexagonal boron nitride wafer.
In addition, in order to solve the problem of characterizing and confirming the properties of single crystals of large-area single-layer thin film structures, researchers used the laboratory's own deep ultraviolet laser PEEM / LEEM equipment to select nearly a hundred micrometers on a 1-inch wafer surface Structure analysis of the micro area of the size, the experimental results confirmed that the orientation of the hexagonal boron nitride film and the surface of the Cu (111) substrate are completely consistent, confirming the single crystal characteristics of the single layer film.