On December 05, 2019, JSCX Semiconductor Technology Co., Ltd. successfully launched a large-size (6-8 inch) silicon carbide single crystal substrate material, the first large-diameter expansion technology in China, which will meet different customer needs in the future.
Silicon carbide is a compound semiconductor material composed of carbon and silicon elements. Because its band gap width is greater than 2.2eV, it is called a wide band gap semiconductor material, and it is also called a third-generation semiconductor material in China. As a key area of national technological development, the silicon carbide market has begun to take shape, but the substrate material is still a bottleneck. Currently, silicon carbide substrates are short and expensive, and account for a large proportion of the cost of the entire industrial chain. Silicon carbide can be widely used in 5G communications, aerospace, rail transit, electric vehicles, photovoltaic energy storage, wind power generation, smart grids, high-voltage transmission and distribution and electrical energy conversion, motor control, energy-saving buildings and other important national defense and civil fields An important support for strategic emerging industries.
The essence of a semiconductor is a material whose conductivity can be controlled, between an insulator and a conductor. Divided from semiconductor materials: first-generation element semiconductor materials, such as silicon (Si) and germanium (Ge); second-generation compound semiconductor materials: such as gallium arsenide (GaAs), indium phosphide (InP), etc .; third generation Wide band gap semiconductor materials, such as silicon carbide (SiC), gallium nitride (GaN), aluminum nitride (AlN), etc. From an industrial perspective, the semiconductor industry is a whole-system industry in which scientific research, technology development, functional design, manufacturing, integrated applications, and system implementation are centered around semiconductors, including materials, performance, and applications. To simplify, the semiconductor industry is based on (semiconductor) materials.
Silicon carbide is currently the most mature and brightest commercial third-generation semiconductor material, and can be called a new generation of "golden track" in the semiconductor industry. Compared to traditional silicon semiconductor materials, silicon carbide has 3 times the forbidden band width, 3 times the thermal conductivity, 10 times the breakdown field strength, and 10 times the electron saturation drift rate. Therefore, devices made of silicon carbide can achieve the miniaturization, light weight, high efficiency and low consumption of power electronic systems, and are known as the "green core of power electronic devices". It is more suitable for electronic application fields such as high temperature, high pressure, high frequency, high power, photoelectricity, radiation resistance, microwave and so on.
At present, global silicon carbide substrates mainly come from Cree and II-VI companies in the United States. They have achieved mass production of 6-inch silicon carbide single crystal substrates and plan to upgrade to 8-inch within a few years. The trend of large size has been formed. Under the international trend of high-quality and large-scale development of silicon carbide, Chinese enterprises are actively deploying a catch-up strategy. JSCX Semiconductor Technology Co., Ltd. regards independent innovation as the lifeblood firmly grasped by the enterprise. The 6-inch silicon carbide expanded diameter crystal launched this time, It has taken the first step to realize the independent controllability of China's strategic emerging semiconductor silicon carbide materials, and will make unremitting efforts to complete China's 13th Five-Year Plan and achieve the goal of manufacturing in China by 2025.