Silicon carbide functional materials have the characteristics of large forbidden band width, strong critical breakdown field, high thermal conductivity, and high saturation drift speed. Silicon carbide functional materials are grown using physical vapor transfer (PVT) methods commonly used at home and abroad. Key technologies include growth temperature and temperature gradient control technology, raw material purification technology, and chemical mechanical polishing (CMP) technology. Silicon carbide power devices have high breakdown voltage, low loss, and fast speed. Under the same application conditions, the system has higher efficiency and smaller size. The silicon carbide SBD device adopts the internationally-used MPS technology and back-thinning technology. The key technologies include surface electric field suppression technology, metallization, annealing, and thinning technology. Silicon carbide MOSFET mass production products use a more mature and more reliable planar gate process. Key processes include gate oxidation.
Applications in the civil field: mainly in the photovoltaic, new energy vehicle, high-performance server power supply and other industries. Among the photovoltaic industry, the main application products are distributed photovoltaic inverters; in the field of new energy vehicles, the main applications include charging piles, On-board chargers, on-board DC ~ DC, and motor drivers. In the high-performance server power supply industry, SBD products mainly used in PFC can increase system efficiency to over 99%. This industry is currently the most widely used industry in SiC.