On August 17, the groundbreaking ceremony of the third-generation semiconductor silicon carbide substrate industrialization base construction project invested by China's leading third-generation semiconductor silicon carbide (SiC) wafer manufacturer BJTK Semiconductor Material Technology Group was held in Beijing.
The third-generation semiconductor silicon carbide substrate industrialization base construction project is a project built by BJTK for the development and production of silicon carbide crystal substrates. The total investment is about 950 million yuan, the total construction area is 55,000 square meters, and a new 400 will be built. / A set of silicon carbide single crystal growth furnace and its supporting silicon carbide substrate production line with cutting, grinding and polishing processing equipment. The project is planned to be completed and put into production in early 2022. After completion, it can produce 120,000 silicon carbide substrates annually.
BJTK will be committed to building the world's third-generation semiconductor silicon carbide substrate material leading enterprise, and provide strong support for the development of China's third-generation semiconductor silicon carbide industry.