HBTG Crystal Co., Ltd. was established in 2012, mainly engaged in the research and development and production of the third generation semiconductor material silicon carbide substrate. The company's main products include 4-inch and 6-inch conductive, semi-insulating silicon carbide substrates, of which 4-inch substrates have reached world advanced levels. At present, the company has built a complete silicon carbide substrate production line and is a well-known domestic silicon carbide substrate production enterprise.
Since its establishment, the company has set up an "Academician Workstation", a "SiC Single Crystal Material and Applied Research Laboratory", and a "Semiconductor Research Achievement Transformation Base" of the Chinese Academy of Sciences. At the same time, it has undertaken a number of national scientific research projects, and Tongguang as the main undertaker of the national 863 plan "high-power GaN electronic devices for large-scale SiC substrate preparation and epitaxial technology research" subject has passed acceptance; Tongguang in 2016 The national key research and development plan "strategic advanced electronic materials" key special project "medium and low voltage SiC materials, devices and their application in electric vehicle charging equipment demonstration" topic. In October 2017, Tongguang, together with Tsinghua University, Peking University Wide Band-Gap Semiconductor Research Center, Semiconductor Research Institute of the Chinese Academy of Sciences, and Hebei University jointly established a "third-generation semiconductor material testing platform", which promoted the domestic third-generation semiconductor industry. development of.