The large forbidden band width, high critical breakdown field strength, high electron mobility, and high thermal conductivity are the characteristics of the third generation semiconductor silicon carbide single crystal material.
As a core material for new generation radar, satellite communications, high-voltage power transmission and transformation, rail transit, electric vehicles, communication base stations and other important fields, silicon carbide single crystals have irreplaceable advantages in extreme environmental applications such as aerospace, military industry, and nuclear energy. It makes up for the shortcomings of the first and second generation semiconductor materials in practical applications, and it is an ideal material for making high temperature, high frequency, high power, radiation resistance, short-wave luminescence and optoelectronic integrated devices, and has important applications in many strategic industries Value and broad application prospects.
"The chips made with this high-purity semi-insulating silicon carbide substrate material can achieve higher communication frequency and higher power density, so that our base station can transmit more information and a faster response rate. The future smart city and autonomous driving will provide a good support, "said Wei Ruxing, deputy general manager of Shanxi Shuoke Crystal Co., Ltd.
In fact, the preparation of silicon carbide single crystal has always been a global problem, and the high stability of the long crystal process technology is its core. Today, this "heart technology" is only in the hands of a few developed countries, and very few companies can achieve commercial mass production. In China, silicon carbide single crystal substrate materials have long relied on imports, and their high prices and unstable supply have greatly restricted the development of related domestic industries.
"There is no highly competitive core technology, and once measures are taken abroad, the high-tech industry will" shock "." Since 2007, the 2nd Institute of China Electronics Technology Co., Ltd. has begun to lay out the development planning of silicon carbide single crystal substrate materials, relying on its own technological advantages in the field of electronic special equipment research and development, and concentrated on the development of silicon carbide single crystal growth furnace. After years of unremitting efforts, we have comprehensively mastered the preparation process of high-purity silicon carbide powder and the preparation process of 4-inch high-purity semi-insulating silicon carbide single crystal substrate, forming from silicon carbide powder preparation, crystal growth, wafer processing, and epitaxy The entire set of silicon carbide material development lines, such as verification, was the earliest mass production of high-purity silicon carbide materials and high-purity semi-insulating chips in China.
At present, the China Electric Power (Shanxi) Electronic Information Technology Innovation Industrial Park with an investment of 5 billion yuan and a land area of about 1,000 mu will be put into operation in the transformation and transformation demonstration area in Shanxi. : China Electric Power (Shanxi) Silicon Carbide Material Industrial Base, China Electric Power (Shanxi) Electronic Equipment Intelligent Manufacturing Industrial Base, China Electric Power (Shanxi) Third Generation Semiconductor Technology Innovation Center, China Electric Power (Shanxi) Photovoltaic New Energy Industry Base. After the project reaches production, it is expected to form an output value of 10 billion yuan. By attracting upstream enterprises, forming an industry agglomeration effect, creating an electronic equipment manufacturing and third-generation semiconductor industry ecological chain, and building the largest domestic silicon carbide material supply base.