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China ’s gallium arsenide (GaAs) technology achieves another major breakthrough: GaAs thin film single-junction cell conversion efficiency reaches 29.1%, setting a new world record again

Hanergy Thin Film Power Group's gallium arsenide (GaAs) technology has made another major breakthrough. According to the Fraunhofer ISE, one of the world's three largest renewable energy research institutions, Hanergy Alta High-End Equipment Group (hereinafter referred to as "Alta") GaAs thin film single junction cell conversion efficiency Reached 29.1%, breaking the world record again.

It is understood that the world record for single-junction cell conversion efficiency was broken by Alta in 2010, and was refreshed by Alta six times in a row, the most recent being 28.9% that Alta created in the first half of 2018. So far, Hanergy has two world records of single-junction cell (29.1%) conversion rate and single-junction cell module (25.1%) conversion rate, further establishing its absolute leading position in the field of high-efficiency solar thin-film batteries.

In 2014, Hanergy acquired Alta Devices, a California wholly-owned company, which became a subsidiary of Hanergy. Hanergy Alta mobile energy technology, with high conversion efficiency, coupled with light, thin and flexible characteristics, enables thin film solar chips to be widely used in automobiles, drones, unmanned driving systems, Satellites, consumer electronics, sensors, remote detection and other applications.

Over the years, Hanergy Alta has focused on using thin-film solar technology to provide the power needed for autonomous systems to operate. "Alta Devices' goal is to help achieve a broader autonomous system and continue to lead the thin-film solar industry. We believe this is the best way to achieve independent innovation." Said Ding Jian, CEO of Alta Devices.

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