Veeco Instruments Inc. And ALLOS Semiconductors GmbH announced on the 8th that they have achieved another stage of cooperation results. The two parties work together to provide industry-leading silicon-based gallium nitride epitaxial wafer product technology for microLED production applications. The purpose of the recent collaboration between the two companies is to demonstrate the ALLOS 200 mm GaN-on-Si epitaxial wafer product technology on Veeco Propel ™ MOCVD reactors while producing epitaxial wafers for a number of outstanding consumer electronics companies worldwide. Reproducibility.
"To turn microLED technology into production, it ’s not enough to show the leading value based on a single indicator. We must ensure that the entire specification of each epitaxial wafer has excellent repeatability and profitability," said Veeco Compound Semiconductor's senior vice president and business unit. General manager Dr. Peo Hansson said. "This successful joint reaffirmation of Veeco's outstanding MOCVD expertise combined with ALLOS silicon-based gallium nitride epitaxial wafer product technology can provide customers with proven and reliable innovative solutions to accelerate the advancement of microLED applications."
As a standard, traditional LED technology achieves wavelength consistency through classification and classification. However, given the small size and large number of microLEDs that cannot be classified and classified, the consistency of epitaxial deposition becomes more important. To make the promise of mass production of microLED displays a reality, the most important success factor is to achieve excellent emission wavelength consistency, which eliminates the need for separate microLED chip testing and sorting. According to industry requirements, epitaxy grading should be between +/- 1 nm (lower limit) and +/- 4 nm (upper limit), depending on the application and mass transfer method. Through a joint project, Veeco and ALLOS have further improved critical wavelength consistency with wafers with a standard deviation of only 0.85 nm, which is the first in the industry in terms of production systems.
"Veeco and ALLOS have verified the reproducibility between the wafers. The average standard deviation of the average wavelength of all wafers is 1.21 nm and the peak wavelength is in the range of +/- 0.5 nm. Therefore, we are moving towards + / "The goal of 1 nm epitaxy grading is another step forward," said Burkhard Slischka, CEO of ALLOS. "Our technology is already available on wafers with a diameter of 200 mm, so that we can use low-cost, high-yield silicon series for microLED chip production. In addition, we have a clear roadmap for 300 mm wafer applications."
As the next major technological change theme, microLED has attracted much attention from display technology innovators. According to research firm Yole Développement, by 2025, the number of commercially available microLED displays may reach 330 million. MicroLED technology with a side length of less than 100 μm is regarded as an important driving factor for the development of flagship displays with lower power consumption, and related technology commitments have fueled this optimism. However, high material costs, low returns, and microLED mass transfer technology production have been hindering the development of such displays. This technology combination effectively addresses these challenges. Veeco and ALLOS will continue to work with customers to further improve silicon-based gallium nitride epitaxial wafers and microLED mass transfer technologies.
On November 12, 2018, the two companies will jointly showcase their breakthrough achievements in detail at the International Nitride Semiconductor Working Conference (IWN) held in Kanazawa, Japan.