On the evening of May 31st, JSND Optoelectronic Materials Technology Group issued an announcement that the company’s self-developed ArF photoresist product has been certified on a memory chip manufacturer`s 50nm flash memory platform in December 2020, and has recently been manufactured in logic chips. The company has achieved a breakthrough in certification for its products at the 55nm technology node.
Details are as follows:
The certification evaluation results show that the certification system selects the customer’s 55nm technology node logic chip product process for verification. The test yield of the ArF photoresist developed by JSND meets the requirements, indicating that it has the process requirements for the back-end metal wiring layer of the 55nm platform .
ArF photoresist material is an important key material in the field of integrated circuit manufacturing, and can be used in the integrated circuit manufacturing process of 90nm-14nm or even 7nm technology nodes. It is widely used in high-end chip manufacturing (such as logic chips, memory chips, AI chips, 5G chips and cloud computing chips, etc.).
The market prospect of ArF photoresist is better than expected. With the rapid development of China's IC industry, the acceleration of independent innovation and localization, and the application of advanced manufacturing processes, the amount of photoresist will be greatly increased.
The complexity of ArF photoresist determines that there are still many process risks in the stable mass production stage. Not only technical research is required, but also process improvement and perfection in the application. These will determine the mass production of ArF photoresist. Scale and economic benefits.